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Charge transport semiconductor materials and semiconductor devices

A charge transport, semiconductor technology, used in semiconductor devices, electric solid state devices, semiconductor/solid state device manufacturing, etc.

Active Publication Date: 2019-03-22
NOVALED GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Any method known so far has its specific drawbacks and limitations

Method used

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  • Charge transport semiconductor materials and semiconductor devices
  • Charge transport semiconductor materials and semiconductor devices
  • Charge transport semiconductor materials and semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0213] Several precursor charge transport polymers and small molecule crosslinkers listed in Table 1 were prepared and used to prepare the charge transport semiconductor materials of the present invention.

[0214] Table 1

[0215]

[0216]

[0217]

[0218]

[0219] general method

[0220] Gel Permeation Chromatography (GPC) measurement of polymer molecular weight was carried out on an Agilent 1100 series (Agilent, USA) normal temperature size exclusion chromatograph equipped with a refractive index detector and a column PL Gel MIXED-B (Polymer Laboratories, UK); The eluent was tetrahydrofuran (THF) and the flow rate was 1 mL / min. Based on calibration with polystyrene standards obtained from Polymer Standards Service (PSS, Germany), the number average molecular weight (M n ) and polydispersity index (PDI).

[0221] Raw Materials for Polymer Preparation

[0222] 2-{4-[bis(4-bromophenyl)amino]phenyl}butan-2-ol (1)

[0223]

[0224] Tris(4-bromophenyl)amine (...

Embodiment J

[0343] Embodiment J (inkjet printing)

[0344] Anisole solution containing PR1 in PP3 and SC1 (same ratio as above) was used as ink and inkjet printer PiXDRO LP50 to generate inkjet printed patterns. Figure 9Shown is a blue "hybrid" OLED with inkjet printed crosslinked p-HTL, where, a) OLED test layout, b) pixel, inkjet printing not optimized, c) at 1 wt% concentration of polymer The pixels under the best inkjet printing, the resolution is 300dpi and the printing speed is 400mm / s.

[0345] result

[0346] Figures 5a-5e The conductivity of layers comprising PP1a and SC1 , PP3 and SC1 , respectively, and different dopants during heating to 120° C. for 3 to 20 minutes are shown. It has been shown that the conductivity of the crosslinked layer remains in a range sufficient for practical application and is substantially practically independent of the crosslinking.

[0347] Figures 6a-6e Shown are the thicknesses of crosslinked layers doped with different dopants before ...

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Abstract

The present invention relates to charge transport semiconductor materials comprising: a) optionally at least one electrical dopant, and b) at least one crosslinked charge transport polymer comprising 1,2,3-triazole crosslinking units , to a preparation method thereof, and to a semiconductor device comprising said charge transport semiconductor material.

Description

technical field [0001] The present invention relates to a charge transport semiconductor material, its preparation method and a semiconductor device comprising the material. Background technique [0002] Organic light-emitting diodes have been promising candidates for large-area displays since Tang et al. . They consist of a series of thin (typically 1 nm to 1 μm) layers of organic material which can be produced by vacuum deposition, spin-on deposition or deposition from solution in their polymeric form. After being electrically contacted by metal layers, they form various electronic or optoelectronic components, such as diodes, light-emitting diodes, photodiodes and thin-film transistors (TFTs), which compete in terms of properties with components built on the basis of inorganic layers. [0003] In the case of an organic light-emitting diode (OLED), light is generated and emitted by the LED as follows: Due to an externally applied voltage, charge carriers (electrons from ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/50H10K99/00
CPCH10K85/115H10K85/111H10K85/654H10K50/155C08G61/12C08G61/123C08G2261/3221C08G2261/76C08G2261/12C08G2261/1412C08G2261/3162C08G2261/3142C08G2261/51C08G2261/95C08G2261/135C08G2261/11C08G2261/1424C08G2261/143C08G2261/1422C08G2261/1414C08G2261/146H01B1/12H01B1/127H10K85/141C08G61/10C08G61/124C08J3/247C08G2261/3241C08G2261/144C08J2365/00C08G2261/79C08J3/246C08G2261/142C08G73/08C08G12/28H10K85/151H10K85/10H10K85/60H10K85/113H10K85/114H10K85/143H10K85/611H10K85/615H10K85/631H10K50/165
Inventor 迈克·策尔纳凯·莱德雷尔安东·基里沃洛季米尔·森科维斯基伊莎贝尔·布丽吉特·沃伊特
Owner NOVALED GMBH