High-transmittance magnetic cobalt target and preparation method thereof

A technology with high permeability and magnetic permeability, applied in ion implantation plating, coating, metal material coating process, etc., can solve the problems of limited improvement of PTF, inconvenient mass production, poor cold working plasticity, etc. Uniform, good magnetron sputtering performance, high magnetic permeability effect

Active Publication Date: 2015-06-10
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the foreign patent US6652668B1 improves the PTF of the cobalt target by rapid cooling with liquid nitrogen after rolling to increase the stress. Not only the production cost is high, but also the mass production is

Method used

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  • High-transmittance magnetic cobalt target and preparation method thereof
  • High-transmittance magnetic cobalt target and preparation method thereof
  • High-transmittance magnetic cobalt target and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] according to Figure 4 The flow chart shown:

[0036] (1) Forging the 99.9% cobalt ingot at 800°C for 1 hour;

[0037] (2) Heat the forged ingot at 700°C for 1 hour, then perform hot rolling, with a pass deformation rate of 20%, a total deformation rate of 80%, and quench water after rolling;

[0038] (3) The target blank is cold-rolled, with a total deformation rate of 8%;

[0039] (4) The slab obtained in (3) is subjected to a special alternating magnetic field heat treatment, the magnetic field is perpendicular to the direction of the target surface, the magnetic field strength is 0.5T, the frequency is 20Hz, the annealing temperature is 450°C, and the cooling rate is 1°C / min. to 399°C, take it out immediately, and quench the water;

[0040] (5) Precise CNC machining into a target with a diameter of 100mm and a thickness of 5mm.

Embodiment 2

[0042] according to Figure 4 The flow chart shown:

[0043] (1) Forging 99.99% cobalt ingot at 900°C for 1.5h;

[0044] (2) Heat the forged ingot at 850°C for 1.5h, and then perform hot rolling. The deformation rate of each pass is 25%, and the total deformation

[0045] The shape rate is 85%, quenched after rolling;

[0046] (3) The target blank is cold-rolled, with a total deformation rate of 15%;

[0047] (4) The slab obtained in (3) is subjected to a special alternating magnetic field heat treatment, the magnetic field is perpendicular to the direction of the target surface, the magnetic field strength is 1T, the frequency is 500Hz, the annealing temperature is 500°C, and it is cooled to 380℃, water quenching;

[0048] (5) Precise CNC machining of targets with a diameter of 300mm and a thickness of 3mm.

Embodiment 3

[0050] according to Figure 4 The flow chart shown:

[0051] (1) Forging 99.999% cobalt ingots at 1100°C for 2 hours;

[0052] (2) Heat the forged ingot at 1000°C for 2 hours, and then perform hot rolling, with a pass deformation rate of 30% and a total deformation rate of 88%, and quench water after rolling;

[0053] (3) The target blank is cold-rolled, with a total deformation rate of 20%;

[0054] (4) The slab obtained in (3) is subjected to special alternating magnetic field heat treatment, the magnetic field is perpendicular to the direction of the target surface, the magnetic field strength is 1.5T, the frequency is 1000Hz, the annealing temperature is 550°C, and the cooling rate is 10°C / min. to 370°C, take it out immediately, and quench the water;

[0055] (5) Precise CNC machining into a target with a diameter of 450mm and a thickness of 4mm.

[0056] Samples were taken from the cobalt targets prepared in Examples 1, 2, 3 and the common method, ie hot forging follo...

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Abstract

The invention relates to a high-transmittance magnetic cobalt target with excellent magnetron sputtering performance and a preparation method thereof, which are mainly used in thin film materials field, and thereby a high-quality cobalt sputtering film can be formed. According to the invention, purity of high-transmittance magnetic cobalt target is 99.9-99.999%, maximum magnetic permeability is no higher than 8, target material diameter is 100-450mm, thickness is 3-5mm, and magnetic permeability (PTF) is no less than 70%. The preparation method comprises the steps of multi-direction hot forging, hot rolling, cold rolling and alternating magnetic field heat treatment after cold rolling. The prepared target material can better satisfy the requirements of the magnetron sputtering technology on the cobalt target, and the obtained film has the advantages of good uniformity and excellent performance.

Description

technical field [0001] The invention relates to a high-permeability cobalt target with excellent magnetron sputtering performance and a preparation method thereof, which are mainly used in the field of thin film materials to form high-quality cobalt sputtered thin films. Background technique [0002] In the semiconductor integrated circuit process, it is very important to realize the effective connection between each semiconductor device, each device and the external power supply signal, and the connection between the metal wiring and the semiconductor device. With the continuous reduction of the size of semiconductor devices, VLSI has expanded to the nanometer scale, and the requirements for the materials produced are getting higher and higher. The signal delay caused by the contact resistance caused by the connection of each device is becoming more and more serious. Therefore, in Metal silicides have been introduced at the submicron level, with cobalt silicide being the mo...

Claims

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Application Information

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IPC IPC(8): C23C14/35B23P15/00
CPCC23C14/3414
Inventor 罗俊峰李勇军黄志勇范亮张丹蒋宇辉王兴权
Owner GRIKIN ADVANCED MATERIALS
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