Novel antibacterial textile fabric preparation method

A textile fabric, a new type of technology, applied in the field of textile processing, can solve the problems of self-decomposition products and volatiles harmful to human body, heat resistance, poor stability, unsuitable for high-temperature processing, etc., to achieve industrial production, low cost, and strong adhesion high degree of effect

Inactive Publication Date: 2015-06-10
JIANGNAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Some commonly used organic antibacterial materials have weak antibacterial properties, poor heat resistance and stability, self-decomposition products and v

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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  • Novel antibacterial textile fabric preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Cleaning: select polyester fabric, put the fabric base material into acetone solution, and wash it with an ultrasonic cleaner for 30 minutes to remove organic solvents, dust and other impurities on the surface of the fabric, then rinse it repeatedly with deionized water and put it in Dry in an oven at 45°C.

[0020] (2) Sputtering: Put the pretreated fabric substrate on the sample holder in the sputtering chamber, the distance between the target material and the fabric substrate is 60 mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background Vacuum, and then rush into high-purity argon with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, sputter the silver target, the sputtering power is 60W, and the sputtering time is 20min; then sputter TiO 2 Target, sputtering power is 100W, sputtering time is 30min; sputtering silver target and TiO 2 When using the targ...

Embodiment 2

[0022] (1) Cleaning: select polyester fabric, put the fabric base material in acetone solution, and wash it with an ultrasonic cleaner for 40 minutes to remove organic solvents, dust and other impurities on the surface of the fabric, then rinse it repeatedly with deionized water and put it in Dry in an oven at 45°C.

[0023] (2) Sputtering: Put the pretreated fabric substrate on the sample holder in the sputtering chamber, the distance between the target material and the fabric substrate is 80mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background Vacuum, and then rush into high-purity argon with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, sputter the silver target, the sputtering power is 40W, and the sputtering time is 10min; then sputter TiO 2 target, the sputtering power is 80W, and the sputtering time is 45min; the sputtering silver target and TiO 2 When us...

Embodiment 3

[0025] (1) Cleaning: Use polypropylene fabric, put the fabric base material into the acetone solution, and wash it with an ultrasonic cleaner for 30 minutes to remove organic solvents, dust and other impurities on the surface of the fabric, then rinse it repeatedly with deionized water and put it in Dry in an oven at 40°C.

[0026] (2) Sputtering: Put the pretreated fabric substrate on the sample holder in the sputtering chamber, the distance between the target material and the fabric substrate is 60 mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background Vacuum, and then rush into high-purity argon with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, sputter the silver target, the sputtering power is 80W, and the sputtering time is 30min; then sputter TiO 2 Target, sputtering power is 100W, sputtering time is 30min; sputtering silver target and TiO 2 When using the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The present invention discloses a novel antibacterial textile fabric preparation method, and belongs to the field of textile processing, wherein nanometer silver particles and nanometer titanium dioxide particles are respectively sputtered on a fabric substrate through a magnetron sputtering technology, and the formed uniform nanometer composite film is covered on fibers so as to obtain the antibacterial fabric. The preparation process comprises: 1, carrying out a fabric pretreatment, wherein washing and drying are performed; and 2 sputtering nanoparticles, wherein the pretreated fabric substrate is placed onto a sample holder in the sputtering chamber, the distance between the target and the fabric substrate is 40-100 mm, a water cooling device is adopted to cool the substrate, the reaction chamber is evacuated to achieve the background vacuum, and high-purity argon gas with a volume fraction of 99.999% is introduced as the sputtering gas. According to the present invention, the method has characteristics of simple processing, easy control, low cost, high efficiency, energy saving, no pollution, and easy industrial production achieving; and the nanometer silver and the nanometer TiO2 are combined to prepare the antibacterial textile fabric so as to substantially improve the antibacterial property of the material and provide the new idea and new method for the preparation of the antibacterial fabric.

Description

technical field [0001] The invention relates to a textile fabric, in particular to a preparation method of a novel antibacterial textile fabric, which belongs to the field of textile processing. Background technique [0002] Microbes play a vital role in the material cycle in nature. In the environment of human life, microbes are everywhere, and people are dealing with microbes all the time in their lives. At the same time, some microorganisms also threaten human health, even life-threatening. Textiles are the most contacted materials for human beings. In the process of contact with them, human sweat, sebum and other secretions become a good source of nutrition for various microorganisms. Under suitable external conditions (including humidity, temperature, etc.) Under the environment, microorganisms grow rapidly, multiply, and spread diseases through various channels, threatening the survival and development of human beings themselves. With the rapid development of industr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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IPC IPC(8): D06M11/83D06M11/46D06M10/00D06M101/32D06M101/20
Inventor 乔辉陈克罗磊魏取福黄锋林
Owner JIANGNAN UNIV
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