Method for manufacturing electron source

A manufacturing method and electron source technology, which are applied in the manufacture of discharge tubes/lamps, electrode systems, cold cathodes, etc., can solve problems such as the increase of energy amplitude and color difference, the stability of discharge current, and the inability to cope with it.
CN104704601AActive Publication Date: 2015-06-10HITACHI HIGH-TECH CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HITACHI HIGH-TECH CORP
Publication Date
2015-06-10

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Abstract

Conventional methods for processing a chip tend not to yield chips with a designated dimension of tip shape, and thus cannot yield a chip with any number of desired diameters. Also, there is a possibility that impurities may adhere to the chip. In the present invention, a chip is processed by controlling an applied voltage to acquire a desired tip diameter using the relationship between the tip diameter of the chip and the applied voltage or enclosure time while processing the tip of the chip. Thereby, it is possible to manufacture a chip with any desired diameter using the sharpened tip of a tungsten single-crystal thin wire having a diameter between 0.1 μm and 2.0 μm, inclusive.
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Description

technical field

[0001] The present invention relates to a method for manufacturing an electron source, and in particular, to a processing method for adjusting the diameter of the tip of a substrate portion serving as an electron beam emission source to a desired size. The substrate processed in this way is used in equipment using electrons extracted into a vacuum, such as electron beam application equipment such as electron microscopes and electron beam exposure equipment, scanning tunneling microscopes (STM) using tunneling currents, and atomic force using atomic forces. Probe microscopes such as microscopes (AFM) and charged particle beam devices for observing / processing / inspecting samples such as ion microscopes. Background technique

[0002] When a strong electric field is applied on the metal surface, the potential barrier has a slope at the junction with the vacuum, when the electric field becomes 10 9 When the V / m series is higher than that, the potential barrier bec...

Claims

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