Electron source manufacturing method

A manufacturing method and electron source technology, which are applied in the manufacture of discharge tubes/lamps, electrode systems, cold cathodes, etc., can solve problems such as the increase of energy amplitude and color difference, the stability of discharge current, and the inability to cope with it.
CN104704601BActive Publication Date: 2017-06-23HITACHI HIGH-TECH CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HITACHI HIGH-TECH CORP
Publication Date
2017-06-23

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Abstract

In the conventional substrate processing method, it is not possible to designate the size of the tip shape for fabrication, and it is not possible to obtain a substrate having a desired arbitrary diameter. In addition, impurities may adhere to the substrate. Using the relationship between the diameter of the front end of the substrate and the applied voltage or the enclosed time when the front end of the substrate is being processed, the applied voltage to obtain the desired front end diameter is controlled to process the substrate. Thereby, a substrate having a desired arbitrary diameter can be produced within a range in which the tip diameter of the sharpened tungsten single crystal filament is in the range of 0.1 μm to 2.0 μm.
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Description

technical field

[0001] The present invention relates to a method for manufacturing an electron source, and in particular, to a processing method for adjusting the diameter of the tip of a substrate portion serving as an electron beam emission source to a desired size. The substrate processed in this way is used in equipment using electrons extracted into a vacuum, such as electron beam application equipment such as electron microscopes and electron beam exposure equipment, scanning tunneling microscopes (STM) using tunneling currents, and atomic force using atomic forces. Probe microscopes such as microscopes (AFM) and charged particle beam devices for observing / processing / inspecting samples such as ion microscopes. Background technique

[0002] When a strong electric field is applied on the metal surface, the potential barrier has a slope at the junction with the vacuum, when the electric field becomes 10 9 When the V / m series is higher than that, the potential barrier bec...

Claims

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