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Photovoltaic material as well as preparation method and application thereof

A photovoltaic material and atomic technology, applied in the field of solar cells, can solve problems such as high cost, increased efficiency, and reduced cost

Active Publication Date: 2015-06-17
SHENZHEN INST OF ADVANCED TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of indium and gallium is relatively high, so it is of great significance to modify the intermediate band of broadband copper-based materials to reduce costs and increase efficiency.

Method used

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  • Photovoltaic material as well as preparation method and application thereof
  • Photovoltaic material as well as preparation method and application thereof
  • Photovoltaic material as well as preparation method and application thereof

Examples

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preparation example Construction

[0024] In the preparation process of the above-mentioned photovoltaic materials, different chemical ratios are used, which will produce different impurity phases in the semiconductor materials. Specific impurity phases can be generated through precise chemical ratio. To produce special functional materials. According to calculations, when Al and Se have an accurate ratio of 1:2, the doped P can replace Al and Se atoms at the same time. The substitution of P for Al and Se produces ions with different electrical properties. The positions of Al and Se tend to be close to each other to form a stable substitution pair, which will help the formation of high-concentration doped materials. The effect of this substitution is to form a new intermediate band in the original energy gap. The density of states of the middle zone is determined by the doping concentration of P. In particular, a more reasonable doping concentration is between 5% and 20%.

[0025] Figure 4-6 Respectively CuA...

Embodiment 1

[0045] See Picture 8 , Picture 8 Schematic diagram of the structure of the evaporation sample equipment. Figure 7 Middle 11, 12, 13, 14 are heating source furnaces for Cu, Al, Se and doped element X respectively. The shutter 20 is used to close the source port in time when the evaporation ends. The molecular beams formed when Cu, Al, Se and doping elements are heated and evaporated. The substrate 30 is disposed between the heater 40 and the heating source furnaces 11, 12, 13, and 14.

[0046] First, put the prepared soda lime glass coated with 1μm thick Mo as a substrate on the sample holder, close the sample window, and use the co-evaporation method to simultaneously heat the source furnace of Cu, Al, P, and Se in the MBE chamber To obtain the photovoltaic material with the atomic ratio of Cu:Al:P:Se=1.0:0.9:0.2:1.9. Among them, the temperature of the substrate is 400°C, and the temperatures of the source furnaces of Cu, Al, P, and Se are 1250°C, 700°C, 200°C, and 270°C, re...

Embodiment 2

[0048] Place the prepared soda lime glass coated with 1μm thick Mo as a substrate on the sample holder, close the sample window, and use the co-evaporation method to simultaneously heat the source furnace of Cu, Al, As, and Se in the MBE chamber. A photovoltaic material with an atomic ratio of Cu:Al:As:Se=1.0:0.95:0.1:1.95 is obtained. Among them, the temperature of the substrate is 420°C, and the temperatures of the source furnaces of Cu, Al, As, and Se are 1260°C, 710°C, 800°C, and 280°C, respectively.

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Abstract

The invention discloses a photovoltaic material. The molecular formula of the photovoltaic material is CuAl(1-y)Se(2-y)X2y, the photovoltaic material adopts an orthorhombic chalcopyrite-type structure similar to CuAlSe2, X substitutes the lattice positions of partial Al atoms and Se atoms, y is equal to 0.05-0.2, and X is a V-group element. The material can absorb both near-infrared sunlight and visible-band sunlight. When the novel material is taken as an absorbed layer to manufacture a photovoltaic device, the material has the high voltage characteristic of a wide band gap semiconductor and also has the high current characteristic of a narrow band gap material, so that the photovoltaic device has higher conversion efficiency. Moreover, the photovoltaic material does not contain indium and gallium, so that the cost is reduced.

Description

Technical field [0001] The present invention relates to the field of solar cells, in particular to a photovoltaic material, a preparation method thereof, and application in solar cells. Background technique [0002] In recent years, the development of solar cell materials has gradually shifted from the first-generation solar cells represented by crystalline silicon to the second-generation, lower-cost thin-film solar cells. The development of first-generation solar cells and second-generation thin-film solar cells represented by crystalline silicon has become increasingly mature. However, both types of batteries use a single energy gap to absorb solar energy, and photons with energy below the energy gap cannot be used ( figure 1 Left 2 process), and the energy of photons with energy higher than the energy gap cannot be completely converted ( figure 1 3 process from the left), so according to Shockley-Queisser theory, the limit conversion efficiency can only reach 31%. [0003] The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00H01L31/032
Inventor 薛艳君李晓光顾光一钟国华武光芬李朝辉罗海林杨春雷肖旭东
Owner SHENZHEN INST OF ADVANCED TECH
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