Unleaded ceramic with high voltage and high energy density simultaneously and preparation method for unleaded ceramic
A technology with high energy storage density and high voltage, applied in the field of lead-free piezoelectric and high energy storage density ceramic materials and their preparation, to achieve the effects of fine and uniform grains, high energy storage density, and low sintering temperature
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Embodiment 1
[0022] The preparation ingredients are: (0.95- x - y - z ) Bi 0.5 Na 0.5 TiO 3 – x Bi 0.5 K 0.5 TiO 3 – y Ba 0.65 Sr 0.35 Ti - o 3 – z K 0.5 Na 0.5 NbO 3 –0.05 LiTaO 3 ,in x =0.05, y =0.02, z =0.02 for ceramic materials.
[0023] The preparation method comprises the following steps:
[0024] Electronic grade powder: Bi 2 o 3 、Na 2 CO 3 、K 2 CO 3 , Li 2 CO 3 、BaCO 3 , SrCO 3 , Nb 2 o 5 、 Ta 2 o 5 and TiO 2 as raw materials, respectively according to the following chemical formula:
[0025] (0.95- x - y - z ) Bi 0.5 Na 0.5 TiO 3 – x Bi 0.5 K 0.5 TiO 3 – y Ba 0.65 Sr 0.35 Ti - o 3 – z K 0.5 Na 0.5 NbO 3 –0.05 LiTaO 3 For batching, use absolute ethanol as the medium for ball milling and wet grinding for 12 hours, dry at 80°C, and pre-synthesize the main crystal phase powder in an alumina crucible at 850°C for 2 hours.
[0026] The synthesized main crystal phase powder was high-energy ball milled with absolute ethanol as ...
Embodiment 2
[0031] The preparation ingredients are:
[0032] (0.95- x - y - z ) Bi 0.5 Na 0.5 TiO 3 – x Bi 0.5 K 0.5 TiO 3 – y Ba 0.65 Sr 0.35 Ti - o 3 – z K 0.5 Na 0.5 NbO 3–0.05 LiTaO 3 ,in x =0.15, y =0.06, z =0.1 for ceramic materials.
[0033] The preparation method is the same as in Example 1, except that the sintering temperature is 750°C.
[0034] The performance is shown in Table 1.
Embodiment 3
[0036] The preparation ingredients are:
[0037] (0.95- x - y - z ) Bi 0.5 Na 0.5 TiO 3 – x Bi 0.5 K 0.5 TiO 3 – y Ba 0.65 Sr 0.35 Ti - o 3 – z K 0.5 Na 0.5 NbO 3 –0.05 LiTaO 3 ,in x =0.25, y =0.002, z =0.08 for ceramic materials.
[0038] The preparation method is the same as in Example 1, except that the sintering temperature is 800°C.
[0039] The performance is shown in Table 1.
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