Fringe-field switching mode thin film transistor array substrate and manufacturing method thereof
A thin-film transistor and fringe field switching technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of rapid release of ionic impurities, residual ionic impurities, and residual ions, etc. Achieve the effect of enhancing fringe electric field, improving afterimage problem and reducing power consumption
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[0029] Embodiments of the present invention provide a fringe field switching mode thin film transistor array substrate and a manufacturing method thereof, which are beneficial to enhancing the fringe electric field, reducing the driving voltage of liquid crystal molecules, thereby reducing power consumption, and effectively improving afterimage problems during display. Each will be described in detail below.
[0030] image 3 is a partial cross-sectional schematic diagram of a thin film transistor array substrate in fringe field switching mode according to the first embodiment of the present invention, please refer to image 3 The thin film transistor array substrate 20 in fringe field switching mode provided in the first embodiment includes a transparent substrate 21 and a plurality of scanning lines 101 formed on the transparent substrate 21 ( figure 1 ) and multiple data lines 102 ( figure 1), a plurality of scanning lines 101 and a plurality of data lines 102 intersect t...
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