Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and system for checking and analyzing repetitive photolithography defect of wafers, and wafer production method

A technology of defect inspection and analysis method, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., and can solve the problems such as difficulty in effective detection of repetitive photolithography defects on wafers, easy missed detection or false detection, etc. Achieve the effect of reducing the risk of shipment, avoiding missed or false detection, and improving the yield

Active Publication Date: 2015-06-17
BYD SEMICON CO LTD +1
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that it is difficult to effectively detect the repetitive lithography defects of the wafer caused by the traditional manual microscope inspection, and it is easy to miss or misdetect the problem, the embodiment of the present invention provides a method for inspection and analysis of the repetitive lithography defects of the wafer, Wafer repetitive lithography defect inspection and analysis system and wafer production method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for checking and analyzing repetitive photolithography defect of wafers, and wafer production method
  • Method and system for checking and analyzing repetitive photolithography defect of wafers, and wafer production method
  • Method and system for checking and analyzing repetitive photolithography defect of wafers, and wafer production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] Such as figure 1 As shown, this example provides a method for inspection and analysis of wafer repetitive photolithography defects, including the following steps:

[0060] S1. Defect inspection step: After a certain batch of wafer photolithography process is completed, N wafers are selected from the batch of wafers, and the defects on the selected wafers are scanned in full to obtain the The defect information of the wafer is selected; the defect information includes the position information and size information of the defect;

[0061] S2. Defect analysis step: comparing the position information and size information of the selected wafer defects;

[0062] If there are defects with consistent position information and size information on the selected wafers, it is determined that the batch of wafers has repetitive lithography defects in the lithography process;

[0063] If there is no defect with consistent position information on the selected wafer, it is determined th...

Embodiment 2

[0100] This example provides a wafer production method, including the following steps: after the photolithography process of a certain batch of wafers is completed, it is subjected to repetitive photolithography defect inspection and analysis;

[0101] If there is no repetitive photolithography defect, continue to follow-up production;

[0102] If there is a repetitive photolithography defect, the product will be treated as abnormal production, the photolithography process will be suspended, and production will continue after the repetitive photolithography defect is eliminated;

[0103] Wherein, the "performing inspection and analysis of repetitive photolithography defects" is realized by the wafer repetitive photolithography defect inspection and analysis method provided in Embodiment 1 above.

[0104] Regarding the above-mentioned wafer production method, most of the content is well known to those skilled in the art. The improvement of the present invention only improves it...

Embodiment 3

[0107] This example provides a wafer repetitive lithography defect inspection and analysis system, such as Figure 7 As shown, it includes the following modules:

[0108] The defect inspection module 1 is used to select N wafers from the batch of wafers after the photolithography process of a certain batch of wafers is completed, and perform full-chip scanning on the defects on the selected wafers to obtain the described Defect information of the selected wafer; the defect information includes position information and size information of the defect;

[0109] Defect analysis module 2, used to compare the position information and size information of the selected wafer defects;

[0110] If there are defects with consistent position information and size information on the selected wafers, it is determined that the batch of wafers has repetitive lithography defects in the lithography process;

[0111] If there is no defect with consistent position information on the selected wafe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In order to solve the problem that the repetitive photolithography defect of wafers are hard to detect effectively and missed or false detection can be easily caused due to traditional artificial microscopic examination, the embodiment of the invention provides a method and a system for checking and analyzing the repetitive photolithography defect of wafers, and a wafer production method. The method for checking and analyzing the repetitive photolithography defect of wafers comprises the following steps: S1, a defect checking step in which selected wafers are all scanned to check defects; and S2, a defect analysis step in which position information and size information of defects of the selected wafers are compared and whether the wafers in the analyzed batch have the repetitive photolithography defect is judged. According to the invention, the selected wafers are all scanned, and special comparative analysis is given to scanning data, so that the repetitive photolithography defect can be checked effectively and comprehensively, missed or false detection can be avoided, the convenience is high, the rate of finished products in the photo-etching process can be further increased, and the delivery risk can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor wafer production, in particular to a repetitive photolithography defect inspection and analysis method in wafer photolithography technology. Background technique [0002] With the improvement of people's living standards, the demand for energy is getting stronger and stronger. In order to meet the requirements, photodiodes, high-power devices such as VDMOS (English full name: Vertical Double-Diffusion Metal-Oxide-Semiconductor, Chinese full name: Vertical Double-Diffusion Metal-Oxide Semiconductor Field Effect Transistor), IGBT (English full name: Insulated Gate Bipolar Transistor, Chinese full name: insulated gate bipolar transistor) and other applications have become more and more popular, and the requirements for the stability and reliability of such devices have also become higher. In addition to product design or process conditions that affect these, defects are the biggest problem. [0003] Es...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20H01L22/34
Inventor 詹祖日
Owner BYD SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com