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Semiconductor element and its manufacturing method

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of increasing breakdown voltage and reducing on-state resistance

Active Publication Date: 2017-12-01
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The first well region is located in the deeply doped region

Method used

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  • Semiconductor element and its manufacturing method
  • Semiconductor element and its manufacturing method
  • Semiconductor element and its manufacturing method

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Experimental program
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Embodiment Construction

[0050] In the following embodiments, when the first conductivity type is N type, the second conductivity type is P type; when the first conductivity type is P type, the second conductivity type is N type. In this embodiment, it is implemented by taking the first conductivity type as P type and the second conductivity type as N type as an example, but the present invention is not limited thereto. The P-type dopant is, for example, boron; the N-type dopant, for example, is phosphorus or arsenic.

[0051] figure 1 It is a schematic cross-sectional view of the semiconductor device according to the first embodiment of the present invention.

[0052] Please refer to figure 1 , the semiconductor element of the first embodiment of the present invention includes a substrate 100, an insulated gate bipolar transistor 200, a metal oxide semiconductor transistor 300, a deeply doped region 120 with a first conductivity type, a first The well region 110, and the base region 130 of the fir...

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Abstract

The invention discloses a semiconductor element and a manufacturing method thereof. The semiconductor element comprises a deeply doped region with a first conductivity type, a well region with a second conductivity type, a base body region with a first conductivity type, an insulated gate bipolar transistors and metal oxide semiconductor transistors. The well region is located in the deeply doped region. The base region is located in the well region and is not connected to the deeply doped region. The insulated gate bipolar transistor is located on the well region at the first side of the base region, and includes a first doped region of the second conductivity type located in the base region. The metal oxide semiconductor transistor is located on the well region and the deeply doped region on the second side of the base region, and includes a second doped region of the second conductivity type located in the base region.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof. Background technique [0002] The current focus of the latest technological developments is on high-voltage power integrated circuits. This kind of high-voltage power integrated circuit can be applied in fields such as switching mode power supply (SMPS), lighting, motor control or plasma display driver, etc., to increase the efficiency, reliability and flexibility of the product and finally Reduce system cost. [0003] Generally speaking, high-voltage power integrated circuits are mainly used in power switching components, such as providing power switching in various power management devices. Currently, there are two parameters that influence the power switching market: breakdown voltage and on-state resistance, which can be determined according to different needs. The design goal of high-voltage power integrated circuits is to reduce the on-state resistance while m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L21/82
Inventor 蔡英杰陈永初龚正
Owner MACRONIX INT CO LTD