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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as performance that cannot meet actual needs, and achieve the effect of improving performance

Active Publication Date: 2015-07-01
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the performance of the above three TFETs in the prior art cannot meet the actual needs

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment 1

[0048] Below, refer to figure 2 The structure of the semiconductor device proposed by the embodiment of the present invention will be described, and the semiconductor device includes a new tunnel field effect transistor (TFET). in, figure 2 It is a schematic cross-sectional view of the structure of a semiconductor device according to an embodiment of the present invention.

[0049] This embodiment provides a new semiconductor device, which includes a TFET structure that can be compatible and integrated with a CMOS planar structure. The TFET is a high-performance TFET, wherein the TFET may be a vertical nanowire array TFET.

[0050] like figure 2 As shown, the semiconductor device of the embodiment of the present invention includes a semiconductor substrate 100 and an embedded insulating layer 1001 located in the semiconductor substrate 100 , and also includes a tunnel field effect transistor located on the semiconductor substrate 100 . Wherein, the tunnel field effect t...

Embodiment 2

[0062] Below, refer to Figure 3A to Figure 3I and Figure 3D' , 3E’ as well as Figure 4 A method for manufacturing a semiconductor device proposed by an embodiment of the present invention will be described. in, Figure 3A to Figure 3I A schematic cross-sectional view of a pattern formed in some relevant steps of the method for manufacturing a semiconductor device according to an embodiment of the present invention; Figure 3D' for Figure 3D A top view of the graphics formed by the corresponding steps; Figure 3E' In the manufacturing method of the semiconductor device of the second embodiment of the present invention Figure 3E A top view of the graphics formed by the corresponding steps; Figure 4 It is a schematic flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

[0063] The method for manufacturing a semiconductor device according to the embodiment of the present invention can be used to manufact...

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor device of the invention comprises a tunnel field effect transistor. The tunnel field effect transistor comprises a first semiconductor layer surrounding the adjacent regions of a source and an insulator, a first gate dielectric layer surrounding the first semiconductor layer, and a gate surrounding the first gate dielectric layer. According to the semiconductor device of the invention, as the tunnel field effect transistor comprises the first semiconductor layer which surrounds the adjacent regions of the source and the insulator and is disposed between the source and the first gate dielectric layer, a large tunneling path region can be formed, large subthreshold swing and large ratio of on-state current to off-state current can be obtained, the performance of the tunnel field effect transistor can be improved, and the performance of the semiconductor device can be improved. The manufacturing method of the invention is used for manufacturing the semiconductor device, and a semiconductor device manufactured by the method has the above advantages.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the field of semiconductor technology, tunnel field effect transistors (Tunnel Field Effect transistors, TFETs) have broad prospects in low power consumption applications. However, although the simulation results are very attractive, the experimental results of silicon TFETs cannot be compared with conventional MOSFETs due to the low drive current and degraded subthreshold swing. (MOSFET) competition. [0003] New implementations of Tunnel Field Effect Transistors (TFETs), such as green FETs, have been proposed. However, high drive currents and swings below 60mV / dec have never been realized due to difficulties in suppressing lateral tunneling components or reducing off-state current. [0004] Figure 1A to Figure 1C Three different Tunnel Field Effect Transistor (TFET) structures...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/10H01L21/336
CPCH01L29/1033H01L29/66477H01L29/78
Inventor 陈勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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