Copper indium gallium selenium thin film solar cell with gradient structure and preparation method thereof

A solar cell and gradient structure technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as increasing carrier recombination, reducing Voc and FF values, achieving wide energy spectrum range, improving efficiency, and high photoelectric conversion efficiency effect

Active Publication Date: 2015-07-08
湖南共创光伏科技有限公司
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Problems solved by technology

The holes and cracks filled in the film increase the recombination of carri

Method used

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  • Copper indium gallium selenium thin film solar cell with gradient structure and preparation method thereof
  • Copper indium gallium selenium thin film solar cell with gradient structure and preparation method thereof
  • Copper indium gallium selenium thin film solar cell with gradient structure and preparation method thereof

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[0045] The present invention will be further described below in conjunction with the embodiments.

[0046] like Figure 1-4 As shown, the typical structure of a copper indium gallium selenide thin film (CIGS) solar cell is a multi-layer film structure, starting from the light incident surface, including: front glass / encapsulation material / TCO front electrode / buffer layer (CdS) / light absorption layer (CIGS) / back electrode layer (Mo) / substrate;

[0047] The CIGS absorption layer in the pn junction of the copper indium gallium selenide thin film solar cell is Cu y (In 1-x Ga x )Se 2 Gradient structure, wherein 0≤x≤1, 0≤y≤1, the gradient structure refers to a multi-layer structure with energy gap gradient; the Cu y (In 1-x Ga x )Se2 The energy gap of the gradient structure is between 1.65eV-1eV, and the transition from the first layer to the last layer is uniform from the high energy gap layer to the low energy gap layer, and the energy gap difference between any two adjace...

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Abstract

The invention discloses a copper indium gallium selenium thin film solar cell with a gradient structure and a preparation method thereof. The cell comprises a pn junction formed by a CIGS absorbing layer and a CdS buffer layer. The CIGS absorbing layer in the pn junction of the copper indium gallium selenium thin film solar cell is of a Cuy(In1-xGax)Se2 multi-layer structure with the energy gap gradient, wherein x is larger than or equal to 0 and smaller than or equal to 1, and y is larger than or equal to 0 and smaller than or equal to 1. The gradient structure has the wide energy spectrum range and can separate and capture free electrons; under the excitation of sunlight, the large current is formed, and the efficiency of the thin film solar cell is improved; due to the gradient structure, the phenomena that crystalline grains grow up abnormally and holes and cracks are formed are avoided, a dense and high-quality thin film with the uniform crystalline grain size and the matched energy gap is obtained, and meanwhile the gradient structure is beneficial to sufficient sunlight absorption; accordingly, the efficiency of the copper indium gallium selenium thin film solar cell is further improved.

Description

technical field [0001] The invention relates to a solar cell, a thin film solar cell with a gradient structure and a manufacturing method thereof, in particular to a structure of a copper indium gallium selenium thin film solar cell with a gradient structure and a manufacturing method thereof. Background technique [0002] Since the French scientist AE. Becquerel discovered the photoelectric conversion phenomenon in 1839, the first solar cell based on semiconductor selenium was born in 1883. Russell obtained the first solar cell patent (US.2,402,662) in 1946, and its photoelectric conversion efficiency was only 1%. It was not until 1954 that Bell Laboratories' research discovered that doped silicon-based materials have high photoelectric conversion efficiency. This research laid the foundation for the modern solar cell industry. In 1958, the Haffman Power Company of the United States installed the first solar panel on a satellite in the United States, and its photoelectric...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0352
CPCH01L31/0296H01L31/032H01L31/0322H01L31/0352H01L31/065H01L31/1876Y02E10/541Y02P70/50
Inventor 李廷凯李晴风钟真
Owner 湖南共创光伏科技有限公司
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