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Multilayer substrate structure, and method and system for manufacturing same

A technology of substrate and close-packed structure, which is used in the field of manufacturing systems and multi-layer substrate structures, and can solve problems such as temperature exceeding the maximum temperature

Inactive Publication Date: 2015-07-15
TIVRA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] While some techniques such as zone melting recrystallization (ZMR) are designed to improve the quality of crystalline materials, they may suffer from the disadvantage that the temperatures generated for melting a portion of the deposited film may exceed the maximum temperature that can be processed by the underlying substrate

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  • Multilayer substrate structure, and method and system for manufacturing same
  • Multilayer substrate structure, and method and system for manufacturing same
  • Multilayer substrate structure, and method and system for manufacturing same

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Embodiment Construction

[0021] Various embodiments are described more fully with reference to the accompanying drawings. These exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to readers of this specification having knowledge in the technical field. In the context, like numerals refer to like elements.

[0022] Figure 1A A cross-sectional view of an example of an exemplary multilayer base structure 100 according to an exemplary embodiment is illustrated. The multilayer base structure 100 may include a base 102 and an epitaxial layer 104 epitaxially grown on the base 100 . Depending on the application, the substrate 102 may include semiconductor materials, compound semiconductor materials, or other types of materials such as metals or non-metals. For example, materials may include molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitride, silicon, silicon carbide, zinc oxide, and rare ea...

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Abstract

A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor. The lattice matching layer and the thermal matching layer may be deposited on a substrate using a lateral control shutter.

Description

[0001] Cross References to Related Applications [0002] This application claims Provisional Application No. 61 / 662,918 filed June 22, 2012, Provisional Application No. 61 / 659,944 filed June 14, 2012, and Formal Application No. 13 / 794,372 filed March 11, 2013 , the priority of Formal Application No. 13 / 794,285, filed March 11, 2013, the contents of which are hereby incorporated by reference in their entirety. technical field [0003] Exemplary embodiments of the present invention relate generally to semiconductor materials, methods, and apparatus, and more particularly to multilayer substrate structures for epitaxial growth of Group III-V compound semiconductors and systems for fabricating the same. Background technique [0004] Group III-V compound semiconductors such as gallium nitride (GaN), gallium arsenide (GaAs), indium nitride (InN), aluminum nitride (AIN) and gallium phosphide (GaP) are widely used in electronic devices such as microwave In the manufacture of frequ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L29/15H01L33/04
CPCC30B25/183C30B25/186C30B1/02C30B29/403C30B29/52C30B23/025C30B25/165C30B23/005
Inventor 因德拉尼尔·德F·马丘卡
Owner TIVRA