Thin film transistor, manufacturing method thereof, array substrate and display device
A technology of thin film transistors and manufacturing methods, applied in the fields of display devices, array substrates, thin film transistors and manufacturing methods, capable of solving problems such as performance degradation, aging, and inability to form ohmic contacts, and achieving the effect of good ohmic contacts
Active Publication Date: 2015-07-22
BOE TECH GRP CO LTD
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Problems solved by technology
[0004] Although the research and development of ZnON TFT is in an advantageous position, the addition of N elements is a difficult point in the development of ZnO-based semiconductor materials, and due to the passage of N elements, good ohmic contacts cannot be formed, resulting in SS (Subthreshold Swing, sub-threshold) of TFT devices. swing) performance degradation
[0005] However, for the above problems, the prior art does not provide an effective solution
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[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0026] At present, oxide (Oxide, for example, IGZO) is widely used as the semiconductor material of thin film transistor (TFT). For example, the more common IGZO TFT includes Coplanar type IGZO TFT, BCE type IGZO TFT and IS type IGZO TFT, these types of IGZO TFTs have their own advantages and disadvantages, take the Coplanar type IGZO TFT as an example, for easy understanding, please refer to figure 1 , figure 1 is a structural schematic diagram...
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The invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display device. The manufacturing method includes; forming a source electrode and a drain electrode of the thin film transistor; forming a metal layer capable of being in oxidation reaction with oxygen ions in a metal nitrogen oxide semiconductor layer on the source electrode and the drain electrode; forming a metal nitrogen oxide semiconductor layer on the metal layer, or the source electrode, the drain electrode and the metal layer. By the manufacturing method, good ohmic contact can be formed, and lowering of SS performance of the thin film transistor is avoided.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method, an array substrate, and a display device. Background technique [0002] Different structures of oxide TFT (Thin Film Transistor, thin film transistor) have different characteristics, and the different electrical characteristics presented by different structures also need to be adjusted in process design. Because the heterogeneous interface between different structures may contain a variety of complex reaction mechanisms (for example, electron migration rate, ohmic contact, etc.), in the process technology, different process environments, plasma treatment, pollution treatment, and oxides It is particularly important for semiconductors to shade under light. [0003] ZnON (Zinc Oxide Nitride) TFT is in an advantageous position in research and development due to its high mobility and low price. Compared with other oxide materials such...
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IPC IPC(8): H01L29/786H01L29/47H01L21/34H01L21/44H01L27/32
CPCH01L21/44H01L29/401H01L29/47H01L29/66969H01L29/7869H10K59/12H01L29/78696H01L29/78618H01L27/1225H01L29/24H01L29/45
Inventor 辛龙宝方金钢
Owner BOE TECH GRP CO LTD