Integrated circuit fuse structure and manufacturing method thereof

Abstract

The invention provides an integrated circuit (IC) fuse structure and a manufacturing method thereof. The method comprises the steps of: forming a contact aperture on a BPSG layer of a silicon substrate; forming a Ti metal layer on the surfaces of the contact aperture and the BPSG layer; forming a TiN layer on the surface of the Ti metal layer; forming a metal plug in the contact aperture; etching the TiN layer on the outside of the metal plug and exposing the Ti metal layer under the TiN layer; forming a metal layer on the surfaces of the metal plug and the exposed Ti metal layer; and photoetching and respectively etching the metal layer and the Ti metal layer under the metal layer into a metal strip and a Ti metal strip to form a fuse structure. The IC fuse structure does not include TiN materials, and can not form a metal molten mass or metal residuals in a fusing process, thereby effectively avoiding failure of a fuse fusing function, and furthermore guaranteeing product yield and qualified rate.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a fuse structure of an integrated circuit and a manufacturing method thereof. Background technique [0002] An integrated circuit (integrated circuit, IC) is a microelectronic device or component that uses a certain process to interconnect components such as transistors, diodes, resistors, capacitors, and inductors required in a circuit, and interconnects them together in a small piece. Or several small semiconductor wafers or dielectric substrates, and then packaged in a package to become a microstructure with the required circuit functions. The integrated circuit integrates all the components on it structurally, so that the electronic components have taken a big step towards miniaturization, low power consumption, and intelligence. Currently, most applications in the semiconductor industry are silicon-based integrated circuits. [0003] A fuse is an importa...

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Problems solved by technology

However, the fuse structure 8 contains titanium nitride material, whose melting point is as high as 2950°C, and cannot be completely sublimated and volatilized into vapor even under a relatively large current, so when the fuse structure 8 is blown, it often causes A complete disconnection cannot be formed, thereby making the function of the fuse structure invalid, resulting in a reduction in the yield and pass rate of the product

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