A Current Enhanced Lateral Insulated Gate Bipolar Transistor

Abstract

A current enhanced type lateral insulated gate bipolar transistor improves current density and the turn-off speed on the premise that a latching ability is maintained to be unchanged. The semiconductor is provided with buried oxide disposed on a P-type substrate and an N-drift region disposed on the buried oxide, a P-body region and an N-buffer region are disposed on the N-drift region, a P-type collecting electrode region is disposed in the N-buffer region, an anode metal is connected to the P-type collecting electrode region, a field oxide layer is disposed on the N-drift region, a P-well region is disposed in the P-body region, a P-type emitting electrode region and an emitting electrode region are disposed in the P-well region, the inner-side boundaries of the four regions, i.e., the P-body region, the P-well region, the P-type emitting electrode region and the emitting electrode region are synchronously recessed inwardly to form a square groove, the emitting electrode region surrounding the groove is successively defined as a first P-type emitting electrode region, second, third and fourth N-type emitting electrode regions and a fifth P-type emitting electrode region, the N-drift region protrudes outwardly and fills the square groove, a surface of the P-body region is provided with a gate oxide layer, a surface of the gate oxide layer is provided with a polysilicon layer, and a gate metal is connected to the polysilicon layer.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, and is a current-enhanced lateral insulated gate bipolar transistor, which is especially suitable for a high-voltage three-phase single-chip inverter integrated circuit to drive a DC brushless motor. Background technique [0002] Insulated gate bipolar transistor IGBT is a composite power device evolved from the combination of MOS gate device structure and bipolar transistor structure. It has the characteristics of MOS transistor and bipolar transistor, and has good on-state current and switching loss. compromise between them. Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (SOI-Lateral Insulated Gate Bipolar Transistor, SOI-LIGBT) is a typical device based on SOI process, with easy integration, high withstand voltage, strong driving current capability, fast switching speed, etc. Advantages, it has been widely used in power integrated circuits. [0003]...

AI Technical Summary

Problems solved by technology

However, while these devices increase the on-current density, they will bring some new problems. For multi-channel LIGBTs, the number of carriers stored in the drift region before turning off is large, and there is no special hole-carrying The sub-draining channel increases the turn-off time of the device, and other technologies to increase the on-current density will also cause problems such as a drop in the withstand voltage of the device or a drop in the ability to resist latch-up.

The drop of the withstand voltage reduces the maximum working voltage of the device, which limits the application of the device; the increase of the off-time increases the switching loss of the device; the latch-up effect will cause the gate signal to lose control of the device, and the device structure may experience Destructive failure, the decline of latch-up suppression ability, which reduces the reliability of the device

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