Gallium nitride base low leakage current fixed-beam switch field effect transistor mixer

Abstract

The invention aims to provide a gallium nitride base low leakage current fixed-beam switch field effect transistor mixer. Three metal semiconductor field-effect transistors (MESFET) with a micro-electromechanical system (MEMS) fixed-beam switch structure replace a conventional MESFET, so that gate electrode leakage current of the transistor in the mixer is reduced, and the power consumption of the circuit is lowered. The mixer has a small volume and is easy to integrated, is made of the gallium nitride material with high electronic mobility, and can realize very high switch frequency. Another innovation of the mixer is a second working mode of the mixer. If a direct current voltage V is only loaded on the gate electrode of the third fixed-beam gate N type MESFET (4) below a differential pair, and the third fixed-beam gate N type MESFET (4) is in a breakover state, the third fixed-beam gate N type MESFET (4) can be considered as a constant current source, and the mixer also can be used as a differential amplifier. Due to the design, the mixer can realize two different functions by use of the same quantity of transistors.

Description

technical field [0001] The invention provides a gallium nitride-based low-leakage current solid-supported beam switch MESFET mixer, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the development of wireless communication technology, the wave of rapid update of mobile terminal equipment has hit the world, and various advanced technologies have been invented and applied to the manufacture of mobile terminal equipment. At the same time, as an indispensable and important part of such equipment, radio frequency integrated circuit (RFIC) chips are also developing rapidly, the scale of integration continues to expand, and the operating frequency continues to increase. Traditional silicon-based materials can no longer meet the requirements. MESFET based on gallium nitride substrate is proposed and applied under this background. Due to the good characteristics of gallium nitride material, the transistor manufactured by it h...

AI Technical Summary

Problems solved by technology

As the number of transistors in the chip is increasing, the power consumption of the integrated circuit will follow. Excessive power consumption will cause the chip to overheat, and the operating characteristics of the transistor will be affected by the temperature. Change, so overheating The chip temperature will not only reduce the life of the chip, but also affect the stability of the chip

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