Organic light-emitting diode and preparation method therefor
An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of easy cracks and pinholes, poor toughness, and easy penetration of water and oxygen into the device
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Embodiment 1
[0060] A method for preparing an organic electroluminescent device, comprising the following steps:
[0061] (1) Provide a clean PET substrate 1 with a thickness of 0.1 mm, and prepare a barrier function layer 2 on the surface of the PET substrate 1, including:
[0062] In a vacuum of 1×10 -5 In the vacuum coating system of Pa, the first inorganic barrier layer 21 is prepared on the surface of the substrate 1 by electron beam evaporation, and the material of the first inorganic barrier layer 21 is Al 2 o 3 , the thickness is 100nm, and the evaporation rate is 0.2nm / s; then the first organic getter layer 22 is prepared on the surface of the first inorganic barrier layer 21 by vacuum evaporation, and the material of the first organic getter layer 22 is two (3- Methylbutyl) beryllium, the thickness is 50nm, and the evaporation rate is 0.1nm / s; then the first inorganic barrier layer 21 is prepared on the surface of the first organic getter layer 22 by electron beam evaporation, ...
Embodiment 2
[0073] A method for preparing an organic electroluminescent device, comprising the following steps:
[0074] (1) Provide a clean PES substrate with a thickness of 0.5mm, and prepare a barrier function layer on the surface of the PES substrate, including:
[0075] In a vacuum of 1×10 -3 In the vacuum coating system of Pa, the first inorganic barrier layer is prepared on the surface of the substrate by electron beam evaporation, and the material of the first inorganic barrier layer is SiO 2 , the thickness is 300nm, and the evaporation rate is 1nm / s; then the first organic getter layer is prepared by vacuum evaporation on the surface of the first inorganic barrier layer, and the material of the first organic getter layer is bis(3-methylbutyl ) beryllium, the thickness is 100nm, and the evaporation rate is 0.5nm / s; then the first inorganic barrier layer is prepared by electron beam evaporation on the surface of the first organic getter layer, and the material of the first inorga...
Embodiment 3
[0085] A method for preparing an organic electroluminescent device, comprising the following steps:
[0086] (1) Provide a clean PI substrate with a thickness of 0.2mm, and prepare a barrier function layer on the surface of the PI substrate, including:
[0087] In a vacuum of 1×10 -4 In the vacuum coating system of Pa, the first inorganic barrier layer is prepared on the surface of the substrate by electron beam evaporation, and the material of the first inorganic barrier layer is Al 2 o 3 , the thickness is 200nm, and the evaporation rate is 0.5nm / s; then, the first organic getter layer is prepared by vacuum evaporation on the surface of the first inorganic barrier layer, and the material of the first organic getter layer is bis(3-methylbutyl base) beryllium, with a thickness of 80nm and an evaporation rate of 0.2nm / s; then, the first inorganic barrier layer is prepared by electron beam evaporation on the surface of the first organic getter layer, and the material of the fi...
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