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Organic light-emitting diode and preparation method therefor

An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of easy cracks and pinholes, poor toughness, and easy penetration of water and oxygen into the device

Inactive Publication Date: 2015-10-14
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Flexible products are the development trend of organic electroluminescent devices, but flexible OLED light-emitting devices also have some problems. The typical problem is that their service life is short. The reason is that the water-oxygen permeability of the OLED light-emitting device using a flexible substrate If it is too high, water and oxygen will easily penetrate into the device, affecting the use
And because the packaging film is made of inorganic materials, its toughness is poor, and cracks and pinholes are prone to occur under repeated flexures, thereby forming channels for water and oxygen to penetrate, thus affecting the service life

Method used

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  • Organic light-emitting diode and preparation method therefor
  • Organic light-emitting diode and preparation method therefor

Examples

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Effect test

Embodiment 1

[0060] A method for preparing an organic electroluminescent device, comprising the following steps:

[0061] (1) Provide a clean PET substrate 1 with a thickness of 0.1 mm, and prepare a barrier function layer 2 on the surface of the PET substrate 1, including:

[0062] In a vacuum of 1×10 -5 In the vacuum coating system of Pa, the first inorganic barrier layer 21 is prepared on the surface of the substrate 1 by electron beam evaporation, and the material of the first inorganic barrier layer 21 is Al 2 o 3 , the thickness is 100nm, and the evaporation rate is 0.2nm / s; then the first organic getter layer 22 is prepared on the surface of the first inorganic barrier layer 21 by vacuum evaporation, and the material of the first organic getter layer 22 is two (3- Methylbutyl) beryllium, the thickness is 50nm, and the evaporation rate is 0.1nm / s; then the first inorganic barrier layer 21 is prepared on the surface of the first organic getter layer 22 by electron beam evaporation, ...

Embodiment 2

[0073] A method for preparing an organic electroluminescent device, comprising the following steps:

[0074] (1) Provide a clean PES substrate with a thickness of 0.5mm, and prepare a barrier function layer on the surface of the PES substrate, including:

[0075] In a vacuum of 1×10 -3 In the vacuum coating system of Pa, the first inorganic barrier layer is prepared on the surface of the substrate by electron beam evaporation, and the material of the first inorganic barrier layer is SiO 2 , the thickness is 300nm, and the evaporation rate is 1nm / s; then the first organic getter layer is prepared by vacuum evaporation on the surface of the first inorganic barrier layer, and the material of the first organic getter layer is bis(3-methylbutyl ) beryllium, the thickness is 100nm, and the evaporation rate is 0.5nm / s; then the first inorganic barrier layer is prepared by electron beam evaporation on the surface of the first organic getter layer, and the material of the first inorga...

Embodiment 3

[0085] A method for preparing an organic electroluminescent device, comprising the following steps:

[0086] (1) Provide a clean PI substrate with a thickness of 0.2mm, and prepare a barrier function layer on the surface of the PI substrate, including:

[0087] In a vacuum of 1×10 -4 In the vacuum coating system of Pa, the first inorganic barrier layer is prepared on the surface of the substrate by electron beam evaporation, and the material of the first inorganic barrier layer is Al 2 o 3 , the thickness is 200nm, and the evaporation rate is 0.5nm / s; then, the first organic getter layer is prepared by vacuum evaporation on the surface of the first inorganic barrier layer, and the material of the first organic getter layer is bis(3-methylbutyl base) beryllium, with a thickness of 80nm and an evaporation rate of 0.2nm / s; then, the first inorganic barrier layer is prepared by electron beam evaporation on the surface of the first organic getter layer, and the material of the fi...

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Abstract

The invention provides an organic light-emitting diode, comprising a substrate, an anode, a hold transfer layer, a light emitting layer, an electron transfer layer, a cathode layer and a packaging layer which are laminated in sequence. A block functional layer is laminated between the substrate and the anode. The block functional layer comprises m first inorganic barrier layers and m-1 first organic getter layers, wherein m is an integer from 3 to 8. A first organic getter layer is arranged between adjacent two first inorganic barrier layers. The packaging layer comprises n second inorganic barrier layers and n-1 second organic getter layers, wherein n is an integer from 3 to 8. A second organic getter layer is arranged between adjacent two second inorganic barrier layers. Materials of the first inorganic barrier layers and the second inorganic barrier layers are silica or alumina. Material of the first organic getter layers and the second organic getter layers are bi(3-methylbutyl)beryllium. The organic light-emitting diode is good in flexural property and has a long service life.

Description

technical field [0001] The invention relates to the related field of electronic devices, in particular to an organic electroluminescent device and a preparation method thereof. Background technique [0002] Organic electroluminescent devices (OLEDs) have the advantages of active luminescence, high luminous efficiency, low power consumption, lightness, thinness, and no viewing angle restrictions, and are considered by industry insiders to be the most likely to occupy a dominant position in the future lighting and display device market new generation devices. As a brand-new lighting and display technology, OLED technology has developed rapidly in the past ten years and has made great achievements. As more and more lighting and display manufacturers around the world have invested in research and development, the industrialization process of OLED has been greatly promoted, and the growth rate of the OLED industry has been astonishing. Now it has reached the eve of mass producti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/54H01L51/56
Inventor 周明杰冯小明张娟娟王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD