Method for one-step pulsed laser deposition of multilayer magneto-optical thin films

A technology of pulsed laser deposition and pulsed laser, which is applied in the direction of chemical instruments and methods, coatings, polycrystalline material growth, etc., can solve the problems of thin film crack preparation time, etc., and achieve the effect of improving quality and improving efficiency

Active Publication Date: 2018-03-30
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention aims to solve the problem that the multilayer magneto-optical film prepared by the existing method will form a large number of cracks and defects inside the film and the problem of long preparation time, thereby providing a method for one-step pulse laser deposition of a multilayer magneto-optic film

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  • Method for one-step pulsed laser deposition of multilayer magneto-optical thin films
  • Method for one-step pulsed laser deposition of multilayer magneto-optical thin films
  • Method for one-step pulsed laser deposition of multilayer magneto-optical thin films

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specific Embodiment approach 1

[0028] Embodiment 1: The method for one-step pulsed laser deposition of multilayer magneto-optical thin films described in this embodiment, the method includes the following steps:

[0029] Step 1. Put the semiconductor substrate into the vacuum chamber, and wait for the vacuum degree in the vacuum chamber to reach 5×10 under the condition of temperature ranging from room temperature to 700°C -5 Torr-1×10 -6 After Torr, fill the vacuum cavity with gas, and keep the gas flow at 5mTorr-25mTorr;

[0030] Step 2. Using the pulsed laser deposition method to continuously deposit two or three layers of iron garnet magneto-optical films in one step, the energy density of the pulsed laser is 1.5J / cm 2 -2.5J / cm 2 , the frequency of the pulsed laser is 1Hz-20Hz;

[0031] Step 3: performing rapid annealing on the thin film deposited in step 2 under an oxygen atmosphere below 800° C., and the duration of the annealing process is 3 minutes to 5 minutes.

specific Embodiment approach 2

[0032] Specific embodiment 2: This embodiment is to further explain the method for one-step pulse laser deposition of multilayer magneto-optical thin films described in specific embodiment 1. In this embodiment, the gas charged into the vacuum chamber is argon, nitrogen or oxygen.

specific Embodiment approach 3

[0033] Embodiment 3: This embodiment is a further description of the method for one-step pulse laser deposition of magneto-optical thin films described in Embodiment 1. In this embodiment, the duration of the annealing process in step 3 is 5 minutes.

[0034] Specific implementation mode four: combination Figure 1 to Figure 4 Describe this embodiment in detail. This embodiment is a further description of the method for one-step pulse laser deposition of a multilayer magneto-optical thin film as described in Embodiment 1. In this embodiment, the material of the deposited iron garnet magneto-optic film is YIG , CeYIG, BIG, or CeBIG.

[0035] figure 1 YIG is the deposited first layer of iron garnet magneto-optical film, and CeYIG, BIG or CeBIG is the deposited second layer of iron garnet magneto-optic film; figure 2 CeYIG, BIG or CeBIG is the deposited first layer of iron garnet magneto-optical film, and YIG is the deposited second layer of iron garnet magneto-optic film; i...

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Abstract

The invention discloses a method for depositing a multilayer magneto-optical thin film by one-step pulse laser, and relates to the technical field of multilayer magneto-optic thin film preparation technology. The method aims to solve the problems that a large number of cracks and defects are formed inside the film and the preparation time is long in the multilayer magneto-optical film prepared by the existing method. The flow rate of the filling gas is kept at 5mTorr‑25mTorr, and the pulsed laser deposition method is used to continuously deposit two or three layers of iron garnet magneto-optical films in one step. The energy density of the pulsed laser is 1.5J / cm2‑2.5J / cm2. The frequency is 1Hz‑20Hz, and rapid annealing is carried out at a temperature below 800°C and an oxygen atmosphere. The invention can be used for depositing multi-layer magneto-optical thin films, and realizes integrated application on optical isolators and other non-reciprocal optical devices.

Description

technical field [0001] The invention relates to the technical field of multilayer magneto-optical thin film preparation technology. Background technique [0002] With the rapid development of the optical communication industry, the optoelectronic integration technology that integrates all optical components (such as optical isolators, modulators and detectors, etc.) on Si or III-V semiconductor platforms has attracted continuous attention. Optical isolator is one of the important passive components. In optical fiber communication, optical information processing and various measurement systems, it can realize the unobstructed passage of forward transmitted light, and completely exclude the reflected light at the junction of optical fiber functional devices, thus Noise from the laser source is effectively eliminated. The working principle of the optical isolator is to use the magneto-optical effect (that is, the Faraday rotation optical effect), that is, when a magnetic field...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23C16/48C23C16/40C30B25/10C30B29/28
Inventor孙学银甄良张雨薇
OwnerHARBIN INST OF TECH