Gallium Nitride-Based Low Leakage Current Cantilever Ring Oscillator and Preparation Method

Abstract

The ring oscillator of the gallium nitride-based low-leakage current cantilever beam of the present invention is composed of three inverters connected end to end. The ring oscillator is based on a GaN substrate, and the gates of the N-type MESFET and the P-type MESFET are suspended The cantilever beam above the P-type GaAs substrate is made of Au material, and there is a pull-down electrode under the cantilever beam, wherein the pull-down electrode under the N-type MESFET cantilever beam is grounded, and the pull-down electrode under the P-type MESFET cantilever beam When the power supply is connected, when the voltage between the cantilever beam and the pull-down electrode of the MESFET is less than the absolute value of the threshold voltage, the cantilever beam will not be pulled down. At this time, there is an air gap between the cantilever beam and the gate, which will cause the MESFET to fail to conduct. In this way, the gate leakage current is well suppressed; when the voltage between the cantilever beam of the MESFET and the pull-down electrode is greater than the absolute value of the threshold voltage, the cantilever beam will be adsorbed to the gate, and the MESFET will be turned on.

Description

technical field [0001] The invention provides a gallium nitride-based ring oscillator of a cantilever beam with low leakage current, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] In the field of integrated circuits, an inverter is the most basic device. It is widely used in various circuits with its unique advantages. Among them, the ring oscillator is the most common application. It consists of an odd number of inverters. The ring oscillator composed of a phase converter has replaced the traditional quartz oscillator and has become the mainstream of integrated circuits because of its simple circuit, easy start-up, small size, and easy integration. At present, due to the high electron mobility, wide operating temperature range, fast carrier velocity and strong anti-interference ability of GaN metal-semiconductor field effect transistor (MESFET), the ring oscillator made of GaN field effect transistor (MESFET) is It ha...

AI Technical Summary

Problems solved by technology

There are two cases of leakage current, one is the off-state channel leakage current when the MESFET device is in the off state, and the current leakage between the drain and source will increase the static power consumption of the system; the other leakage current is the gate Pole leakage current, this kind of leakage current will increase the heat generation of the device and increase the power consumption

At present, there are relatively few studies on reducing the leakage current. The present invention designs a cantilever beam ring oscillator with a very small gate leakage current on the GaN substrate.

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