Thermally-driven RF MEMS switch

Abstract

The invention provides a thermally-driven RF MEMS switch which comprises a substrate. A buckling switch structure is arranged on the substrate. The buckling switch structure comprises cantilever beams (3a, 4a). The tail ends of the cantilever beams (3a, 4a) are provided with mutually cooperating locking hooks. The side surface of the cantilever beam (3a) is provided with a V-shaped beam buckling thermal driver (1) used for driving the cantilever beam (3a). The side surface of the cantilever beam (4a) is provided with a V-shaped beam unlocking thermal driver (2) used for driving the cantilever beam (4a). A horizontal thermally-driven switch is adopted in the invention. The technical errors of an LCP substrate are reduced. The switch reliability, consistency and performance stability when the substrate is bent are improved.

Description

technical field [0001] The invention is a heat-driven RF MEMS switch realized by using LCP material technology, and belongs to the technical field of microelectronic devices. Background technique [0002] In the research of microwave technology, RF MEMS devices have attracted extensive attention in the field of radio frequency due to their excellent microwave performance, especially RF MEMS switches, because of their low insertion loss, high isolation, high linearity and low power consumption, Become the preferred device to replace traditional RF switches. In microwave systems, switches have a large number of applications, which are used to turn on and off microwave signals. For example, the reconfigurability of radio frequency devices is generally based on radio frequency switches. [0003] The vast majority of RF MEMS switches are manufactured on silicon substrates or gallium arsenide substrates, but due to the poor compatibility between the processing technology of silic...

AI Technical Summary

Problems solved by technology

At present, the research on RF MEMS switches based on LCP substrates at home and abroad is mainly electrostatically driven switches, and the electrostatically driven switches with double-ended fixed beam and cantilever beam structures are all longitudinal switches, which are prone to longitudinal dimension differences in the LCP substrate processing technology. Problems such as errors and introduced stress lead to deterioration of switch consistency and performance degradation. In addition, because LCP is a flexible material, it will cause reliability and drive problems in longitudinal RF MEMS switches in the event of bending.

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