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Semiconductor substrate cleaning system and method for cleaning semiconductor substrate

A technology for semiconductors and substrates, which is applied in the field of semiconductor substrate cleaning systems and semiconductor substrate cleaning, and can solve problems such as damage to Si-based substrates and inability to completely remove Pt or Pt alloys

Inactive Publication Date: 2015-10-28
KURITA WATER INDUSTRIES LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] However, any of the existing methods will cause damage to the silicide, Si-based insulating film, and Si-based substrate, and cannot completely remove Pt or Pt alloys, or even if Pt or Pt alloys can be completely removed, it will take a long time. cleaning problem

Method used

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  • Semiconductor substrate cleaning system and method for cleaning semiconductor substrate
  • Semiconductor substrate cleaning system and method for cleaning semiconductor substrate
  • Semiconductor substrate cleaning system and method for cleaning semiconductor substrate

Examples

Experimental program
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Embodiment approach 1

[0093] Below, based on figure 1 A semiconductor substrate cleaning system according to one embodiment of the present invention will be described.

[0094] The semiconductor substrate cleaning system 1 has: a chip cleaning machine 2 equivalent to the cleaning section of the present invention, a nitric acid solution storage tank 3 for storing a nitric acid solution, a hydrogen peroxide solution storage tank 4 for storing a hydrogen peroxide solution, and a storage tank 4 for storing a hydrogen peroxide solution. A sulfuric acid solution storage tank 5 containing a sulfuric acid solution of persulfuric acid, and a halide solution storage tank 6 for storing a halide solution containing any one or more of chloride, bromide, and iodide.

[0095] In addition, the nitric acid solution and the hydrogen peroxide solution correspond to the first solution in this embodiment, and the nitric acid solution storage tank 3 and the hydrogen peroxide solution storage tank 4 correspond to the fir...

Embodiment

[0135] Examples and comparative examples of the present invention are shown below. In addition, in the examples and comparative examples used figure 1 The semiconductor substrate cleaning system briefly shown in .

[0136] [Example]

[0137] Use a mixed solution consisting of nitric acid or hydrogen peroxide or a solution of both as the first solution, make it contact with the above-mentioned semiconductor, and then use a sulfuric acid solution containing persulfuric acid and chloride, bromide, iodide A mixed liquid composed of any one or more halide solutions is used as the second solution, which is brought into contact with the above-mentioned semiconductor substrate.

[0138] In each cleaning process, the mixed solution is heated and mixed, and immediately (within 10 minutes) is supplied to the following cleaning process of contacting the original wafer (Japanese: ベタウエエハ).

[0139] Hereinafter, as the most suitable evaluation method, a NiPt removal rate of 95% or more is...

reference example 5

[0154] exist figure 1 In the chip cleaning machine, use the 1st solution (nitric acid concentration 2% by weight, hydrogen peroxide concentration 29% by weight), respectively to (1) the original wafer that has the NiPt layer of 10nm stacked on the silicon wafer and (2) in The raw wafer in which the Al layer of 500 nm was laminated on the silicon wafer was subjected to contact cleaning at 50° C. for 30 seconds at 200 ml / min. Then rinse the wafer with pure water to remove the first solution, and then use electrolytic sulfuric acid (30% sulfuric acid concentration, 0.04 mol / L oxidant concentration, 0.1 mol / L hydrochloric acid concentration) as the second solution to treat the above (1) NiPt respectively. The wafer and the aforementioned (2) Al wafer were subjected to contact cleaning at 50° C. for 50 seconds at 200 ml / min. Use ICP-MS to analyze the composition of the treated solution, and confirm the NiPt removal rate of the wafer and the erosion rate of Al through the concentra...

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Abstract

A method for cleaning a semiconductor substrate, wherein platinum and / or a platinum alloy is removed from the surface of a semiconductor substrate which has a layer that contains Si as a constituent. This method enables an effective cleaning without damaging an Al or silicide film, an Si insulating film, an Si substrate and the like. A method for cleaning a semiconductor substrate, wherein platinum and / or a platinum alloy is removed from the surface of a semiconductor substrate which has a layer that contains Si as a constituent, said method comprising: a first cleaning step wherein the semiconductor substrate is cleaned by bringing a first solution, which contains nitric acid and / or hydrogen peroxide as a main solute, into contact with the semiconductor substrate; and a second cleaning step wherein the semiconductor substrate after the first cleaning step is cleaned by bringing a second solution, which contains a halide and a sulfuric acid solution containing an oxidant and is at a temperature of 25-100°C, into contact with the semiconductor substrate.

Description

technical field [0001] The present invention relates to a cleaning method and system for cleaning a semiconductor substrate having a layer containing silicon as a constituent element to remove platinum or a platinum alloy. Background technique [0002] In recent years, in order to reduce the resistance of the source and drain in the transistor formation process, materials such as Ni and Co are used, and silicide conversion to NiSi or CoSi is performed. In addition, in order to reduce junction leakage current, an alloy obtained by mixing 5 to 10% of Pt or Pd into Ni or Co is used. Among them, when NiPt is used, the improvement of heat resistance and the effect of suppressing junction leakage current are expected (see Patent Documents 1 and 2). [0003] In the silicidation step, the alloy is formed into a film on the Si substrate and then thermally oxidized. The alloy reacts with Si to form a silicide, but it is necessary to remove the remaining unreacted alloy. For example,...

Claims

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Application Information

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IPC IPC(8): H01L21/304
CPCH01L21/02068H01L21/32134H01L21/67017C11D3/3947C11D7/08C11D7/10H01L21/67051C11D2111/22B08B3/08
Inventor 小川祐一
Owner KURITA WATER INDUSTRIES LTD