Substrate for power modules, substrate with heat sink for power modules, and power module

A technology for power modules and heat sinks, applied in electrical solid state devices, circuit thermal devices, semiconductor devices, etc., can solve the problems of inability to promote heat dissipation, inability to form cooling capacity, insufficient heat sink strength, etc., and achieve excellent power cycle characteristics, The effect of suppressing cracks and effectively dissipating heat

Active Publication Date: 2015-10-28
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the radiator itself is not strong enough and it is very difficult to handle
[0017] In addition, since the heat sink is formed by casting, the structure of the heat sink becomes relatively simple, and a heat sink with high cooling capacity cannot be formed, and there is a problem that heat dissipation cannot be promoted.

Method used

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  • Substrate for power modules, substrate with heat sink for power modules, and power module
  • Substrate for power modules, substrate with heat sink for power modules, and power module
  • Substrate for power modules, substrate with heat sink for power modules, and power module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0148] A comparative experiment performed to confirm the effectiveness of the present invention will be described.

[0149] As shown in Table 1, bond the insulating substrate, the aluminum plate serving as the first aluminum layer of the circuit layer, the copper plate serving as the first copper layer, the aluminum plate serving as the second aluminum layer of the metal layer, and the copper plate serving as the second copper layer. To produce substrates for power modules.

[0150] The size of the circuit layer is 37mm×37mm, the size of the insulating substrate is 40mm×40mm, and the size of the metal layer is 37mm×37mm.

[0151] "TLP" shown in Table 2, by adding Cu to 1.0mg / cm 2 fixed on the surface of the insulating substrate, and on the stacking side with 5kgf / cm 2 In the pressurized state, at 10 -3 In a vacuum of Pa, the aluminum plate and the insulating substrate were bonded by heating at a temperature of 600° C. for 30 minutes.

[0152] "Al-Si brazing" shown in Table...

Embodiment 2

[0181] Next, as in the above-mentioned second embodiment and Image 6 As shown in , the metal layer of the power module substrate and the heat sink were joined via the second solder layer, and the joining rate of the second solder layer was evaluated.

[0182] As shown in Table 3, an insulating substrate, an aluminum plate as the first aluminum layer of the circuit layer, a copper plate as the first copper layer, an aluminum plate as the second aluminum layer as the metal layer, and a copper plate as the second copper layer were fabricated to produce a power Module substrate.

[0183] The size of the circuit layer is 37mm×37mm, the size of the insulating substrate is 40mm×40mm, and the size of the metal layer is 37mm×37mm.

[0184] In addition, "TLP" and "Al-Si brazing" shown in Table 4 were made into the same joining method as Example 1 and Table 2 mentioned above.

[0185] In addition, a heat sink is bonded to the other side of the metal layer of the power module substrate...

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Abstract

The present invention is a substrate (10) for power modules, which is provided with an insulating substrate (11), a circuit layer (12) that is formed on one surface of the insulating substrate (11), and a metal layer (13) that is formed on the other surface of the insulating substrate (11). The circuit layer (12) has a first aluminum layer (12A) that is formed of aluminum or an aluminum alloy and is bonded to the insulating substrate (11), and a first copper layer (12B) that is formed of copper or a copper alloy and is bonded to the first aluminum layer (12A) by solid-phase diffusion. The metal layer (13) has a second aluminum layer (13A) that is formed of aluminum or an aluminum alloy. The thickness (t1) of the circuit layer (12) and the thickness (t2) of the second aluminum layer (13A) of the metal layer (13) satisfy the relation t1 < t2.

Description

technical field [0001] The present invention relates to a substrate for a power module used in a semiconductor device for controlling large current and high voltage, a substrate for a power module with a heat sink, and a power module. [0002] This application claims priority based on Patent Application No. 2013-072677 filed in Japan on March 29, 2013 and Patent Application No. 2013-216802 filed in Japan on October 17, 2013, and uses the contents thereof here. Background technique [0003] Among semiconductor elements, since power semiconductor elements for supplying electric power generate relatively high heat, as a substrate on which the power semiconductor elements are mounted, for example, a power module substrate including a circuit layer and a metal layer is used. Made of AlN (aluminum nitride), Al 2 o 3 (alumina), Si 3 N 4 An insulating substrate made of (silicon nitride) or the like is formed by bonding a first metal plate to one side, and the metal layer is form...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/373H01L25/07H01L25/18
CPCH01L23/3735H01L23/36H01L23/4006H01L23/473H01L25/07H01L25/18H01L2224/32225H01L2924/13055B23K1/0016B23K1/19B23K20/023C04B35/645C04B37/021C04B37/026C04B2235/6562C04B2235/6581C04B2237/121C04B2237/124C04B2237/125C04B2237/127C04B2237/128C04B2237/343C04B2237/366C04B2237/368C04B2237/402C04B2237/407C04B2237/704C04B2237/706C04B2237/708C04B2237/86B23K2101/40B23K2103/10B23K2103/12B23K2103/18H05K1/0203H05K1/09H05K1/181H05K2201/066
Inventor 长友义幸寺崎伸幸黑光祥郎
Owner MITSUBISHI MATERIALS CORP
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