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High-power long-wave infrared 8 micron-12 micron laser device based on polarization beam combination technology

A long-wave infrared and polarization beam combining technology, which is applied in the field of laser applications, can solve the problems of low conversion efficiency of a single optical parametric oscillator and difficulty in obtaining high output power of a single resonant cavity, and achieve the effect of improving the light-to-light conversion efficiency

Active Publication Date: 2015-11-11
HARBIN INST OF TECH
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Problems solved by technology

[0004] The present invention aims to solve the problem that the output power of the 8 μm-12 μm laser obtained in the way of optical parametric oscillation (OPO) or optical parametric amplification (OPA) is limited by the damage threshold of the crystal film layer, making it difficult to obtain a single resonant cavity High output power, and the problem of low conversion efficiency of a single optical parametric oscillator

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  • High-power long-wave infrared 8 micron-12 micron laser device based on polarization beam combination technology
  • High-power long-wave infrared 8 micron-12 micron laser device based on polarization beam combination technology

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specific Embodiment approach 1

[0035] Specific implementation mode 1, refer to figure 1 and figure 2 Describe this embodiment in detail. The high-power long-wave infrared 8 μm to 12 μm laser based on polarization beam combining technology described in this embodiment includes No. 1 coupling system 5-1, No. 2 coupling system 5-2, and No. 3 coupling system 1. Beam splitter 2. No. 1 mirror 3. 1 / 2 wave plate 4. No. 1 ZnGeP 2 Optical parametric oscillator 5, No. 2 ZnGeP 2 Optical parametric oscillator 6, No. 1 plane mirror 9-1, No. 2 plane mirror 9-2, No. 3 plane mirror 10-1, ZnGeP2 optical parametric amplifier 7, No. 1 reflector 14 and polarizer 15;

[0036] A beam of 2.1 μm pulsed laser is vertically incident on the No. 3 coupling system 1, and after the beam conversion by the No. 3 coupling system 1, it enters the beam splitter 2 at an incident angle of 45°, and is divided into two beams by the beam splitter 2. It is horizontally polarized 2.1μm laser;

[0037] A beam of horizontally polarized 2.1 μm las...

specific Embodiment approach 2

[0042] Specific Embodiment 2. This specific embodiment is a further description of the high-power long-wave infrared 8 μm to 12 μm laser based on polarization beam combining technology described in specific embodiment 1. In this embodiment, No. 1 ZnGeP 2 The optical parametric oscillator 5 includes No. 4 plane mirror 6-1, No. 5 plane mirror 7-1, No. 2 reflector 6-2, No. 3 reflector 6-3 and No. 1 ZnGeP2 crystal 8-1;

[0043] After being converted by the No. 1 coupling system 5-1, it is incident on the No. 1 ZnGeP 2 The No. 4 plane mirror 6-1 of the optical parametric oscillator 5 has an incident angle of 45°. After being transmitted by the No. 4 plane mirror 6-1, it is incident on the No. 1 ZnGeP2 crystal 8-1, and passes through the No. 1 ZnGeP2 crystal 8-1 at 45 °. The incident angle enters the No. 5 plane mirror 7-1, and is reflected and transmitted by the No. 5 plane mirror 7-1;

[0044] After being reflected by No. 5 plane mirror 7-1, it is incident on No. 3 reflector 6-3 ...

specific Embodiment approach 3

[0047] Specific Embodiment 3. This specific embodiment is a further description of the high-power long-wave infrared 8 μm ~ 12 μm laser based on the polarization beam combining technology described in specific embodiment 1. In this embodiment, No. 2 ZnGeP 2 Optical parametric oscillator 6 comprises No. 6 plane mirror 6-4, No. 7 plane mirror 7-2, No. 4 reflector 6-5, No. 5 reflector 6-6 and No. 2 ZnGeP2 crystal 8-2;

[0048] The beam is transformed by the No. 2 coupling system 5-2 and then incident on the No. 2 ZnGeP 2 The No. 6 plane mirror 6-4 in the optical parametric oscillator 6 is incident to the No. 2 ZnGeP2 crystal 8-2 after being transmitted by the No. 6 plane mirror 6-4; No. plane mirror 7-2, reflected and transmitted through No. 7 plane mirror 7-2;

[0049] After being reflected by No. 7 plane mirror 7-2, it is incident on No. 5 reflector 6-6 at an incident angle of 45°; after being reflected by No. 5 reflector 6-6, it is incident on No. 4 reflector 6-5 at an incide...

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Abstract

A high-power long-wave infrared 8 micron-12 micron laser device based on a polarization beam combination technology relates to the laser application technology field. A problem that output power of a 8 micron-12 micron laser acquired through an existing optical parametric oscillator (OPO) or optical parametric amplification (OPA) mode is limited by a crystal film damage threshold so that a single resonant cavity is difficult to acquire high output power is solved. Beam splitting is performed on a 2.1 micron pulse laser and then two ZnGeP2 optical parametric oscillators are pumped respectively so as to generate two beams of orthogonal polarization-state far-infrared lasers of 8 micron-12 micron so that pump light intensity borne by an upper end surface of a single ZnGeP2 crystal is greatly reduced. An optical parametric amplification technology is used to further amplify the 8 micron-12 micron laser and finally two beams of 8 micron-12 micron lasers which do not need polarization are combined into one beam of the 8 micron-12 micron laser with high power. The laser device of the invention is suitable for an occasion of laser acquisition.

Description

technical field [0001] The invention relates to the technical field of laser application. Background technique [0002] The long-wave infrared 8μm-12μm band laser is the wavelength response range of infrared focal plane detectors such as HgCdTe or GaAs / AlGaAs quantum wells. Most toxic hydrocarbon gases such as ethane, butane, dichlorobenzene, etc. Has a strong absorption line. Therefore, these characteristics make 8μm~12μm lasers play an important role in the fields of environmental detection, laser infrared directional jamming, differential absorption radar and so on. [0003] The most common and effective way to obtain 8 μm ~ 12 μm laser output is the method of optical parametric oscillation (OPO) or optical parametric amplification (OPA), but its output power is limited by the damage threshold of the crystal film layer, and a single resonator is very difficult. Difficult to obtain higher output power. Contents of the invention [0004] The present invention aims to s...

Claims

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Application Information

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IPC IPC(8): H01S3/082H01S3/10
Inventor 姚宝权申英杰戴通宇段小明鞠有伦王月珠
Owner HARBIN INST OF TECH
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