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Perovskite type solar cell based on multi-orientation ordered crystallization and preparation method thereof

A solar cell and perovskite-type technology, applied in the field of solar cells, can solve the problems of complex process and high production cost, and achieve the effects of improving performance stability, energy conversion efficiency, crystallinity and orientation order

Active Publication Date: 2015-11-18
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, silicon-based solar cells, which dominate the application of photovoltaic technology, have provided us with products with an installed capacity of more than 10GW. Solar cells continue to be questioned

Method used

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  • Perovskite type solar cell based on multi-orientation ordered crystallization and preparation method thereof
  • Perovskite type solar cell based on multi-orientation ordered crystallization and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step 1: Provide an ITO glass substrate and perform standardized cleaning; dissolve methylammonium iodide, lead chloride, and indium chloride in a molar ratio of 3:0.85:0.05 in N,N-dimethylformamide solution, and stir 5 hours, obtain the perovskite DMF solution of 30wt%;

[0029] Step 2: Process the poly(3,4-ethylenedioxythiophene: polystyrene sulfonate solution) on the transparent electrode of the substrate by spin coating method, accelerate to 4500rpm and rotate for 40 seconds to form a uniform anode modification layer ;

[0030] Step 3: Anneal the film at 95°C in air for 30 minutes to form a uniform anodic modification layer;

[0031] Step 4: Process the perovskite layer film on the poly(3,4-ethylenedioxythiophene: polystyrene sulfonate film) by spin coating, and anneal at 100°C for 30 minutes to obtain a uniformly cured photosensitive layer;

[0032] Step 5: Continue to process the [6,6]-phenyl-C61-butyric acid methyl ester film on the perovskite film by spin coati...

Embodiment 2

[0036] Step 1: Provide an ITO glass substrate and perform standardized cleaning; dissolve methylammonium iodide, lead chloride, and indium chloride in a molar ratio of 3:0.85:0.25 in N,N-dimethylformamide solution, and stir 5 hours, obtain the perovskite DMF solution of 30wt%;

[0037] Step 2: Process the poly(3,4-ethylenedioxythiophene: polystyrene sulfonate solution) on the transparent electrode of the substrate by spin coating method, accelerate to 4500rpm and rotate for 40 seconds to form a uniform anode modification layer ;

[0038] Step 3: annealing the film in air at 95°C for 10 minutes to form a uniform anodic modification layer;

[0039] Step 4: Process the perovskite layer film on the poly(3,4-ethylenedioxythiophene: polystyrene sulfonate film) by spin coating, and anneal at 95°C for 50 minutes to obtain a uniformly cured photosensitive layer;

[0040] Step 5: Continue to process the [6,6]-phenyl-C61-butyric acid methyl ester film on the perovskite film by spin coa...

Embodiment 3

[0044]Step 1: Provide an ITO glass substrate and perform standardized cleaning; dissolve methylammonium iodide, lead chloride, and indium chloride in a molar ratio of 3:0.85:0.15 in N,N-dimethylformamide solution, and stir 5 hours, obtain the perovskite DMF solution of 30wt%;

[0045] Step 2: Process the poly(3,4-ethylenedioxythiophene: polystyrene sulfonate solution) on the transparent electrode of the substrate by spin coating method, accelerate to 4500rpm and rotate for 40 seconds to form a uniform anode modification layer ;

[0046] Step 3: Anneal the film at 95°C in air for 20 minutes to form a uniform anodic modification layer;

[0047] Step 4: Process the perovskite layer film on the poly(3,4-ethylenedioxythiophene: polystyrene sulfonate film) by spin coating, and anneal at 98°C for 40 minutes to obtain a uniformly cured photosensitive layer;

[0048] Step 5: Continue to process the [6,6]-phenyl-C61-butyric acid methyl ester film on the perovskite film by spin coating...

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Abstract

The invention discloses a perovskite type solar cell based on multi-orientation ordered crystallization and a preparation method thereof. The preparation method comprises the steps that: step 1, methylammonium iodate, lead chloride, indium chloride or indium iodide dissolves in a N,N-dimethylformamide solution to obtain a perovskite type DMF solution; step 2, an electrode is processed by a poly (3,4-ethylenedioxythiophene) : polystyrene sulfonic acid salline solution to form an anode decoration layer; step 3, annealing is carried out on a thin film to form an anode decoration layer; step 4, the perovskite type thin film is processed and then is treated by annealing to obtain a photosensitive layer; step 5, a methyl [6,6]-phenyl-C61-butyrate (PCBM) thin film is processed to obtain an electron transfer layer; step 6, a 1,10-phenanthronline,4,7-diphenyl (Bphen) thin film is continuously processed to obtain a cathode decoration layer; and step 7, a cathode electrode is processed. With the prepared solar cell, the energy conversion efficiency of the device and the device stability are improved obviously.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a perovskite solar cell and a preparation method thereof, in particular to a perovskite solar cell with multi-orientation ordered crystallization and a preparation method thereof. Background technique [0002] At present, silicon-based solar cells, which dominate the application of photovoltaic technology, have provided us with products with an installed capacity of more than 10GW. Solar cells are constantly being questioned. Perovskite solar cells have attracted the attention of many researchers due to their low cost and simple structure. [0003] Since 2009, new solar cells based on organic-inorganic perovskite materials have received widespread attention. In just a few years, their energy conversion efficiency has rapidly increased from 3% to more than 15%, showing great potential. Application prospects. [0004] In order to further realize the needs of its industrialization, high-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/40H10K30/80H10K30/00Y02E10/549
Inventor 廖良生王照奎李萌
Owner SUZHOU UNIV
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