Formation method of semiconductor structure

Abstract

A method for forming a semiconductor structure, comprising: providing a substrate with fins on the surface, a dielectric layer on the surface of the substrate and part of the sidewall surfaces of the fins, the surface of the dielectric layer is lower than the top surface of the fins; A first protective layer is formed on the surface of the layer, the sidewall and the bottom surface of the fin, and the density of the first protective layer is greater than that of silicon oxide; an oxidation process is used to form a second protective layer on the surface of the first protective layer; on the surface of the second protective layer Forming a mask layer, the mask layer exposes part of the second protective layer on the surface of the fin portion, and the second protective layer is used to isolate the first protective layer and the mask layer; using the mask layer as a mask, ion implantation process is used on the fin Ion doping inside the part; after the ion implantation process, the mask layer, the second protection layer and the first protection layer are removed, and the surface of the dielectric layer, and part of the sidewall and bottom surface of the fin are exposed. The formed semiconductor structure has good morphology and precise and uniform feature size.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is proposed i...

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Problems solved by technology

[0005] However, in the existing fin field effect transistors, the surface morphology of the fins is poor, and the feature size (CD, Critical Dimension) is not uniform, which makes the fin field effect transistors prone to leakage current and unstable performance.

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