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A kind of method for preparing single crystal graphene

A single crystal graphene, semiconductor technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high process requirements, complex equipment and control process, etc., to reduce the concentration of carbon sources, reduce carbon Source density, the effect of reducing the difficulty of the process

Active Publication Date: 2017-11-28
NAT INST OF METROLOGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For this reason, the technical problem to be solved by the present invention is that the technical requirements of the method for preparing single crystal graphene in the prior art are too high, and the equipment and control process are complicated

Method used

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  • A kind of method for preparing single crystal graphene
  • A kind of method for preparing single crystal graphene

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Embodiment 1

[0028] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:

[0029] S1: A laminated structure is obtained by disposing a quartz layer 2 on the upper surface and the lower surface of the copper foil 3, and the quartz layer 2 completely covers the copper foil 3.

[0030] S2: The laminated structure is placed in a closed container that is evacuated from the air, such as figure 1 As shown, the closed vessel is the quartz tube 4 shown in the figure.

[0031] S3: Introduce hydrogen and argon into the closed vessel, and heat the closed vessel to 1050° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 200 sccm, and the flow rate of argon gas is 1000 sccm.

[0032] S4: continuously annealing the laminated structure at a temperature of 1050° C. for 1.5 hours.

[0033] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 25 minutes, wherein the...

Embodiment 2

[0037] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:

[0038] S1: A laminated structure is obtained by arranging a sapphire layer on the upper surface and the lower surface of the copper foil, and the sapphire layer completely covers the copper foil.

[0039] S2: placing the laminated structure in a quartz tube evacuated of air.

[0040] S3: Introduce hydrogen and argon into the quartz tube, and heat the closed vessel to 1000° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 150 sccm, and the flow rate of argon gas is 750 sccm.

[0041] S4: continuously annealing the laminated structure at a temperature of 1000° C. for 1.5 hours.

[0042] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 30 minutes, wherein the flow rate of methane and hydrogen gas is 150 sccm.

[0043] S6: Take out the laminated structure, lower the temper...

Embodiment 3

[0046] The present embodiment provides a kind of method for preparing single crystal graphene, comprises the following steps:

[0047] S1: A silicon layer is provided on the upper surface and the lower surface of the copper foil to obtain a laminated structure, and the silicon layer completely covers the copper foil.

[0048] S2: placing the laminated structure in a quartz tube evacuated of air.

[0049] S3: Introduce hydrogen and argon into the quartz tube, and heat the closed vessel to 1025° C. to make the copper foil in a molten state; wherein the flow rate of hydrogen gas is 130 sccm, and the flow rate of argon gas is 850 sccm.

[0050] S4: continuously annealing the laminated structure at a temperature of 1030° C. for 2 hours.

[0051] S5: Pass methane and hydrogen gas into the closed vessel to grow single crystal graphene for 20 minutes, wherein the flow rate of methane and hydrogen gas is 180 sccm.

[0052] S6: Take out the stacked structure, lower the temperature to ...

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Abstract

The invention provides a method for preparing single-crystal graphene. A semiconductor layer is arranged on the upper surface and the lower surface of the metal foil to obtain a laminated structure of a half-layer body layer / metal foil / semiconductor layer, and the laminated structure is placed in an air-evacuated environment. In the closed container, the closed container is heated under the state of hydrogen and argon gas, so that the metal foil is in a molten state, and the metal foil can be in closer contact with the semiconductor layer on the upper surface and the lower surface, and the contact area between the metal foil and methane is large. Reduction, thereby greatly reducing the carbon source density on the surface of the metal foil, can contribute to the large-area growth of single-crystal graphene. Because the metal foil is in close contact with the semiconductor layer on the upper and lower surfaces, the carbon source concentration on the metal foil surface can be greatly reduced, so the requirement for the vacuum degree in the preparation process can be slightly reduced, and the strictness of the control of the amount of methane can also be reduced. Therefore, the difficulty of the process is reduced, and the preparation process is easier to realize.

Description

technical field [0001] The invention relates to the technical field of graphene material preparation, in particular to a method for preparing single crystal graphene. Background technique [0002] Graphene is the thinnest and hardest nano-material known in the world. It is almost completely transparent and only absorbs 2.3% of light; its thermal conductivity is as high as 5300W / m K, which is higher than that of carbon nanotubes and diamonds. The electron mobility exceeds 15000cm2 / V·s, which is higher than carbon nanotubes or silicon crystals, and the resistivity is only about 1Ω·m, which is lower than copper or silver. It is the material with the smallest resistivity in the world. Because of its extremely low resistivity and extremely fast electron migration, it is expected to be used to develop a new generation of electronic components or transistors that are thinner and conduct electricity faster. Since graphene is essentially a transparent and good conductor, it is also ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B25/02C23C16/26
Inventor 王雪深李劲劲钟青钟源
Owner NAT INST OF METROLOGY CHINA
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