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A kind of preparation method of indium oxide with octahedral morphology

A technology of indium oxide and octahedron, which is applied in the field of indium oxide with octahedral morphology prepared by solvothermal combined with high-temperature calcination, can solve the problem that the research of high-tech deep-processing products is still in its infancy, and achieve easy control of reaction parameters and economical Facilitate scale-up and industrial production, good shape and size uniformity

Inactive Publication Date: 2017-01-25
QINGDAO UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

my country is the country with the most indium resources and a major producer of indium, but the research on its high-tech deep-processing products is still in its infancy

Method used

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  • A kind of preparation method of indium oxide with octahedral morphology
  • A kind of preparation method of indium oxide with octahedral morphology

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Embodiment 1

[0009] Weigh 0.2g InCl 3 4H 2 O and 0.064g urea were put into a beaker, 15mL of ethylene glycol was added, and a transparent solution was formed by magnetic stirring for 2 hours. Finally, the mixed solution was transferred to a stainless steel autoclave lined with polytetrafluoroethylene, and kept at 120°C for 24 hours. , cooled to room temperature in air, and collected samples. Wash with absolute ethanol, centrifuge, and dry in air at 80°C for 6 hours to obtain a white powder. The dried white powder was calcined in a tube furnace at 600° C. for 3 h under air condition to obtain indium oxide with octahedral morphology.

Embodiment 2

[0011] Weigh 0.2g InCl 3 4H 2 O and 0.064g urea were placed in a beaker, 15mL of ethylene glycol was added, and a transparent solution was formed by magnetic stirring for 2 hours. Finally, the mixed solution was transferred to a stainless steel autoclave lined with polytetrafluoroethylene, and kept at 160°C for 18 hours. , cooled to room temperature in air, and collected samples. Wash with absolute ethanol, centrifuge, and dry in air at 60°C for 10 h to obtain a white powder. The dried white powder was calcined in a tube furnace at 650° C. for 2 h under air condition to obtain indium oxide with octahedral morphology.

Embodiment 3

[0013] Weigh 0.2g InCl 3 4H 2 O and 0.066g urea were put into a beaker, 15mL of ethylene glycol was added, and a transparent solution was formed by magnetic stirring for 2 hours. Finally, the mixed solution was transferred to a stainless steel autoclave lined with polytetrafluoroethylene, and kept at 160°C for 18 hours. , cooled to room temperature in air, and collected samples. Wash with absolute ethanol, centrifuge, and dry in air at 80°C for 12 hours to obtain a white powder. The dried white powder was calcined in a tube furnace at 650° C. for 2 h under air condition to obtain indium oxide with octahedral morphology.

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Abstract

The present invention relates to a preparation method of indium oxide with octahedral morphology, aims to solve the problems of difficult morphology control, complicated preparation process, higher synthesis temperature and longer reaction time of the preparation method of indium oxide with octahedral morphology in the prior art, and meanwhile provides a low-cost indium oxide octahedral structure material. The preparation method of the octahedral indium oxide structure is as follows: (1) a mixed solution of indium chloride and urea is prepared, ethylene glycol is added and dissolved, and by magnetic stirring, a homogeneous colorless and transparent solution is prepared; (2) the colorless and transparent solution is solvothermally reacted to collect a solvothermal product; (3) the solvothermal product is washed with absolute ethanol, centrifuged and dried to obtain a precursor; and (4) the indium oxide octahedral structure is obtained by calcination of the precursor. Advantages are that: the preparation method solves the difficult problem of product morphology control, is simple in process, low in synthesis temperature, and shorter in reaction time, so that the obtained product is low-cost, and has a wider range of application.

Description

technical field [0001] The invention relates to a method for preparing indium oxide with octahedral morphology, in particular to a method for preparing indium oxide with octahedral morphology in combination with solvothermal and high-temperature calcination. Background technique [0002] Indium oxide is a new n-type transparent semiconductor functional material, which has a wide band gap, low resistivity and high catalytic activity, and has been widely used in the field of optoelectronics, gas sensors and catalysts. my country is the country with the most indium resources and a major producer of indium, but the research on its high-tech deep-processing products is still in its infancy. In order to make reasonable use and value-added of my country's indium resources, the R&D and production of indium oxide and its doping compounds should be increased. Recently, the synthesis of indium oxide nanostructures with regular morphologies has attracted attention. It is hoped that th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00
Inventor 郭志岩宣宗伟马清璇杜芳林
Owner QINGDAO UNIV OF SCI & TECH