Silicon-based ceramic surface metallization method
A ceramic surface and metallization technology, which is applied in metal processing equipment, welding media, welding/cutting media/materials, etc., can solve the problem of low connection strength and reliability between connecting components and silicon-based ceramics, high residual stress at the connection interface, and metal In order to improve the connection strength and connection reliability, easy and reliable connection, and high repeatability
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specific Embodiment approach 1
[0031] Specific implementation mode 1: The surface metallization method of silicon-based ceramics in this implementation mode is realized according to the following steps:
[0032] Step 1, prepare Ti-Si alloy solder
[0033] According to weight percentage, weigh 72% ~ 78% of sponge Ti and the rest of single crystal Si, put the weighed sponge Ti and single crystal Si into a non-consumable electric arc furnace for vacuum melting until the solder is a uniform eutectic structure , to obtain Ti-Si alloy solder;
[0034] Step 2, preparing Ti-Si alloy brazing filler metal sheet
[0035] Cut the Ti-Si alloy brazing filler metal obtained in step 1 into Ti-Si alloy brazing filler metal sheets with a thickness of 0.5 mm to 1 mm with a wire electric discharge cutting machine, and then use 1200# sandpaper to double-cut the Ti-Si alloy brazing filler metal sheet. Polish the surface, and finally ultrasonically clean it twice in acetone, each time for 10-20 minutes;
[0036] Step 3, silico...
specific Embodiment approach 2
[0045] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 1, 75% of sponge Ti and the rest of single crystal Si are weighed by weight percentage. Other steps and parameters are the same as in the first embodiment.
specific Embodiment approach 3
[0046] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the purity of the sponge Ti in step 1 is >99.97%; the purity of the single crystal Si is >99.99%. Other steps and parameters are the same as those in Embodiment 1 or 2.
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