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A photoelectron emission source, its manufacturing method, and electron emission device

A technology of electron emission device and electron emission source, which is applied in the direction of electrode system manufacturing, discharge tube/lamp manufacturing, cold cathode manufacturing, etc. It can solve the problems of long response time and inability to directly realize high-frequency pulse emission of electrons.

Active Publication Date: 2018-09-04
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since this emission method is based on the thermal electron emission mode, the electron emission source needs to be maintained at a relatively high temperature for a long time to achieve stable emission of electrons, resulting in a long response time, and it is impossible to directly realize high-frequency pulse emission of electrons.
Although field electron emission has the characteristics of instantaneous response and can realize high-frequency pulse emission, it requires high field strength (about several thousand volts per micron), which is very important for high-voltage insulation, vacuum degree, work stability and operation safety in practical applications. high demands

Method used

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  • A photoelectron emission source, its manufacturing method, and electron emission device
  • A photoelectron emission source, its manufacturing method, and electron emission device
  • A photoelectron emission source, its manufacturing method, and electron emission device

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Experimental program
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Embodiment 1

[0037] figure 1 It shows a flowchart of a method for manufacturing a photoelectron emission source provided by Embodiment 1 of the present invention, as figure 1 Shown, described manufacturing method comprises the following steps:

[0038] Step S11: Select a conductive substrate suitable for carbon nanotube growth;

[0039] Step S12: depositing a catalyst layer on the conductive substrate;

[0040] Step S13: growing carbon nanotubes on the catalyst layer.

[0041] Figure 2a-2c A cross-sectional view of the structure corresponding to each step of the manufacturing method of the photoelectron emission source provided according to Embodiment 1 of the present invention is shown.

[0042] Such as Figure 2a As shown, a conductive substrate 201 suitable for carbon nanotube growth is selected.

[0043] The conductive substrate 201 is a doped silicon substrate, a metal substrate or a two-dimensional conductive material substrate. Among them, the doped silicon substrate is a hi...

Embodiment 2

[0060] Figure 6 A flowchart showing a method for manufacturing a photoelectron emission source provided in Embodiment 2 of the present invention; Figure 6 As shown, the described method comprises the following steps:

[0061] Step S61: Select a conductive substrate suitable for carbon nanotube growth.

[0062] Step S62: preparing a patterned catalyst layer on the conductive substrate as required.

[0063] Step S63: growing carbon nanotubes on the catalyst layer.

[0064] Figures 7a-7c A cross-sectional view of the structure corresponding to each step of the manufacturing method of the photoelectron emission source provided according to the second embodiment of the present invention is shown.

[0065] Such as Figure 7a As shown, a conductive substrate 701 suitable for carbon nanotube growth is selected.

[0066] The conductive substrate 701 is a doped silicon substrate, a metal substrate or a two-dimensional conductive material substrate. Among them, the doped silico...

Embodiment 3

[0079] Figure 10 It shows a structural diagram of an electron emission device provided by Embodiment 3 of the present invention, wherein the arrows represent the light emitted by the light source; the photoelectron emission source prepared in the above embodiment is applied to the photoelectron emission device, as Figure 10 As shown, the electron emission device includes:

[0080] Vacuum cavity 1001 , anode 1002 , electron emission source 1003 , cathode support 1004 , first kovar 1005 , second kovar 1006 , light source 1007 , beam focusing system 1008 , anode lead 1009 and cathode lead 1010 .

[0081] The vacuum cavity 1001 is provided with an anode 1002, an electron emission source 1003 and a cathode support 1004; wherein, the vacuum cavity 1001 can be made of glass or stainless steel with an incident window, such as 304 steel.

[0082] The electron emission source 1003 is arranged on the cathode support 1004, and the electron emission source 1003 is opposite to the anode ...

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Abstract

The embodiment of the invention discloses a light-induced electron emission source, a manufacturing method thereof and an electron-emitting device. The manufacturing method comprises a step of selecting a conductive substrate suitable for carbon nanotube growth, a step of depositing a catalyst layer on the conductive substrate, and a step of growing a carbon nanotube on the catalyst layer. According to the embodiment of the invention, the light-induced electron emission source which is prepared through depositing the catalyst layer on the conductive substrate and growing the carbon nanotube has the advantages of large emission current density, high photoemission efficiency, a low vacuum degree requirement, high stability, simple preparation method and low cost.

Description

technical field [0001] The invention relates to an electron emission technology, in particular to a photoinduced electron emission source, a manufacturing method thereof, and an electron emission device. Background technique [0002] Electron emission sources have a wide range of applications in display, lighting, microwave amplifiers, electron microscopes, material analysis, and aerospace. Thermionic emission and field electron emission have been widely used in national production and life, and with the continuous development of various application fields, higher requirements have been put forward for electron emission sources in terms of modulation performance, high-frequency emission performance, safety and portability, etc. Require. [0003] Generally speaking, the emission of electrons from an electron emission source is a process in which electrons are released from the constraints of the electron emission source to vacuum or anode under certain effects. There are ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/30H01J29/04H01J9/02C01B32/00
Inventor 戴庆李振军李驰白冰
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA