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Preparation method of dipping type tungsten-rhenium-osmium ternary mixed base diffusion cathode

A diffusion cathode, mixed-base technology, applied in cold cathode manufacturing, thermionic cathode manufacturing, electrode system manufacturing, etc., can solve the problems of increased cathode preparation cost, high price, and little research on ternary mixed-base cathodes. dosage, increase the emission current density, and improve the effect of electron emission density

Active Publication Date: 2022-01-14
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the currently studied mixed-based cathodes mainly include binary mixed-based cathodes such as tungsten-rhenium, tungsten-osmium, and tungsten-iridium, and there are few studies on ternary mixed-based cathodes.
[0005] In addition, because Os, Ir, etc. are expensive, adding too much Os, Ir to the matrix will lead to a significant increase in the cost of cathode preparation, so how to add Os, Ir to the cathode, but at the same time keep the added Os, Ir and other elements in the Cathode surface becomes a focus of research

Method used

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  • Preparation method of dipping type tungsten-rhenium-osmium ternary mixed base diffusion cathode
  • Preparation method of dipping type tungsten-rhenium-osmium ternary mixed base diffusion cathode
  • Preparation method of dipping type tungsten-rhenium-osmium ternary mixed base diffusion cathode

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Add 8g of nanoscale osmium powder to the rhenium-coated tungsten powder, and heat the uniformly mixed ternary powder in a high-temperature hydrogen furnace at 1300°C for 30 minutes to obtain a ternary powder containing 50% tungsten, 25% rhenium, and 25% osmium. Mixed powder, its shape is as image 3 (c) shown.

[0029] Compression and sintering of the ternary mixed base powder: weigh the ternary mixed base powder, put it into a grinding tool with an inner diameter of 3mm, and use a powder tablet press for bidirectional molding. Under the pressure of 0.8Mp, hold the pressure for 25S to obtain a sintered green body; keep the green body in a high-temperature hydrogen furnace at 1500°C for 30min to obtain a ternary mixed base cathode substrate, the microstructure is as follows image 3 (d) shown.

[0030] The ternary mixed matrix was impregnated with 411 metal salt at 1750°C, and after salt washing and annealing treatment (under hydrogen, at a temperature of 1000°C for 1 ...

Embodiment 2

[0033] Add 4g of nanoscale osmium powder to the rhenium-coated tungsten powder, and heat the uniformly mixed ternary powder in a high-temperature hydrogen furnace at 1300°C for 30 minutes to obtain a ternary powder containing 57% tungsten, 29% rhenium, and 14% osmium. Mix powder, other is with embodiment 1.

[0034] As in Example 1, the ternary mixed powder was subjected to pressing, sintering, salt washing and annealing to obtain a ternary mixed base cathode. The test results obtained after the pulse emission test are as follows: Figure 4 .

Embodiment 3

[0036] Add 16g of nanoscale osmium powder to the rhenium-coated tungsten powder, and keep the uniformly mixed ternary mixed powder in a high-temperature hydrogen furnace at 1300°C for 30 minutes to obtain a ternary powder containing 40% tungsten, 20% rhenium, and 40% osmium. Mix powder, other is with embodiment 1.

[0037] As in Example 1, the ternary mixed powder was subjected to pressing, sintering, salt washing and annealing to obtain a ternary mixed base cathode. The test results obtained after the pulse emission test are as follows: Figure 4 .

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Abstract

The invention discloses a preparation method of a dipping type tungsten-rhenium-osmium ternary mixed base diffusion cathode, which relates to a microwave electric vacuum device manufacturing technology. Nano-grade osmium powder is added on the basis of micron-grade particle powder with a rhenium-coated tungsten structure, and after ternary mixed powder is sintered, special-structure powder with rhenium-osmium alloy coated tungsten particles can be formed. In the cathode matrix sintering and cathode dipping process, internal tungsten can be diffused outwards, a stable tungsten-rhenium-osmium ternary alloy film layer is formed on the surface of the cathode, and the electron emission density of the cathode can be improved due to the existence of rhenium and osmium.

Description

Technical field [0001] The invention relates to the technical field of microwave electric vacuum device manufacturing, and is a method for preparing an impregnated tungsten-rhenium-osmium ternary mixed base diffusion cathode. Background technique [0002] Electric vacuum electronic devices are widely used in civilian and military applications, such as microwave communications, medical diagnosis, radar, electronic countermeasures and many other fields. As the electron source of electric vacuum devices, the cathode is known as the core of electric vacuum devices, and it plays an important role in the application of electric vacuum devices. In recent years, with the continuous development of electric vacuum devices, the device has increasingly higher requirements for the electron emission capability of the cathode. For example, in high-power terahertz radiation sources, the demand for electron beam current density is usually as high as hundreds of A / cm 2 . [0003] Barium tun...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/04H01J1/142H01J1/146
CPCH01J9/04H01J9/047H01J1/142H01J1/146Y02E60/50
Inventor 刘伟胡志凯杨韵斐李世磊王金淑周帆高俊研刘乐奇
Owner BEIJING UNIV OF TECH
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