Composition for forming upper layer film and resist pattern forming method using same

一种组合物、图案的技术，应用在用于光机械设备的光敏材料、电气元件、半导体/固态器件制造等方向，能够解决污染光学系统或光掩模、曝光精度劣化等问题，达到优异图案、减轻深紫外线的影响、吸收率高的效果

Active Publication Date: 2015-12-23
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such gas is called outgassing, and it contaminates optical systems such as mirrors or photomasks in exposure equipment, and as a result, exposure accuracy may deteriorate.

Method used

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  • Composition for forming upper layer film and resist pattern forming method using same
  • Composition for forming upper layer film and resist pattern forming method using same
  • Composition for forming upper layer film and resist pattern forming method using same

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Embodiment 101～121

[0086] As triphenylene derivatives, the aforementioned compounds (1-1), (1-2), (1-3) and (2B-1) were prepared. Compound (1-1) used a commercial item. Compounds (1-2) and (1-3) are synthesized by reacting compound (1-1) as a raw material with a carboxylic anhydride compound. Specifically, compound (1-1) was dissolved in dimethylformamide, triethylamine was added and stirred for 10 minutes, thereafter, 3 equivalents of isobutyric anhydride or benzoic anhydride were added, and heated and stirred at 110°C for 2 hours , thereby reacting. The reaction mixture was cooled to room temperature, the solvent was distilled off by distillation under reduced pressure and concentrated until it became about half the amount. A 0.1 M hydrochloric acid aqueous solution was slowly added to the concentrated reaction mixture with stirring, to form a precipitate. The generated precipitate was separated by filtration, washed with water, and dried to obtain the target triphenylene derivative.

[00...

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PUM

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Abstract

Provided is: a composition for forming an upper layer film, which enables the formation of a pattern that has excellent roughness and pattern shape in a pattern forming method by means of extreme ultraviolet light exposure; and a pattern forming method which uses this composition for forming an upper layer film. [Solution] A composition for forming an upper layer film, which is characterized by containing a triphenylene derivative having a hydrophilic group and a solvent; and a method wherein a pattern is formed by applying this composition to a resist surface and then exposing and developing this composition. This composition may additionally contain a polymer.

Description

technical field [0001] The present invention relates to a composition for forming an upper layer film used in photolithography. More specifically, it relates to a composition for forming an upper layer film formed on a resist film before exposing the EUV resist film when forming a resist pattern by photolithography. In addition, the present invention also relates to a pattern forming method using such an upper layer film-forming composition. Background technique [0002] In recent years, along with the miniaturization of various devices, the demand for high integration of semiconductor integrated circuits has been increasing, and the development of finer resist patterns has also been demanded for the corresponding resist patterns. In order to meet such demands, it is necessary to perform exposure with light having a shorter wavelength in photolithography. As a result, the light used becomes shorter in wavelength, from the use of visible light to the use of ultraviolet rays...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08F20/10C08G63/133H01L21/027
Inventor 王晓伟冈安哲雄G·帕夫洛夫斯基绢田贵史
Owner MERCK PATENT GMBH
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