A method for preparing rare earth-doped tungsten oxide nanostructure film

A nanostructure, rare earth doping technology, applied in chemical instruments and methods, luminescent materials, etc., can solve problems such as changes in material structure and electronic energy band structure, changes in optical properties of materials, etc., and achieves good crystallinity, simple preparation method, The obvious effect of fluorescence performance

Active Publication Date: 2018-03-23
WUYI UNIV
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  • Summary
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Problems solved by technology

On the other hand, the high temperature makes the W atoms slightly shift in the center of the regular octahedron, and the basic ions (Li + 、Na + 、H + ) into the lattice to occupy the position of B (the process is reversible), it is easy to induce changes in the material structure and electronic band structure, resulting in changes in the optical properties of the material

Method used

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  • A method for preparing rare earth-doped tungsten oxide nanostructure film
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  • A method for preparing rare earth-doped tungsten oxide nanostructure film

Examples

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Effect test

Embodiment 1

[0022] 1) Silicon wafers (20*20 mm 2 ) Ultrasonic cleaning in alcohol and deionized water for 15 min, and then drying in an oven at 120 °C;

[0023] 2) Weigh 0.4504 g of tungsten powder and 0.0508 g of europium oxide powder respectively, mix and grind them for 10 minutes, spread them evenly in the tungsten boat, place the dried silicon substrate on the tungsten boat, the distance between the tungsten boat and the substrate is 4 mm ;

[0024] 3) Vacuumize the chamber. When the vacuum degree is 7.0 Pa, inject Ar 30 sccm and stabilize for 20 min;

[0025] 4) Turn on the evaporation current for heating, and raise the temperature of the tungsten boat to 1000 °C within 5 minutes. The heating process is fast first and then slow;

[0026] 5) After holding at 1000 °C for 30 minutes, reduce the evaporation current to 0 A within 5 minutes, turn off the evaporation power supply, and cool the sample to room temperature naturally;

[0027] 6) Finally, put the sample into the annealing fu...

Embodiment 2

[0030] 1) Quartz slices (20*20 mm 2 ) ultrasonic cleaning in alcohol and deionized water for 15 min, and then drying at 110 °C;

[0031] 2) Weigh 0.7904 g tungsten powder and 0.0103 g europium oxide powder respectively, mix and grind them for 10 min, spread them evenly in a tungsten boat, place a dried quartz substrate on the tungsten boat, the distance between the tungsten boat and the substrate is 30 mm ;

[0032] 3) Vacuumize the chamber. When the vacuum degree is 1.0 Pa, feed Ar 100 sccm and stabilize for 10 min;

[0033] 4) Turn on the evaporation current for heating, and raise the temperature of the tungsten boat to 1200 °C within 10 minutes. The heating process is fast at first and then slow;

[0034] 5) After holding at 1200 °C for 60 minutes, reduce the evaporation current to 0 A within 15 minutes, turn off the evaporation power supply, and cool the sample to room temperature naturally;

[0035] 6) Finally, put the sample into an annealing furnace and anneal at 550...

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Abstract

The invention relates to a preparation method of a rare earth-doped tungsten oxide nanostructure film. The process step is to use a mixture of W powder and rare earth oxide as a raw material, and first use a traditional thermal evaporation method on quartz, silicon wafers, ceramics, etc. A thin film is grown on the substrate, and then annealed to obtain a rare earth-doped tungsten oxide nano film. The rare earth-doped tungsten oxide nanostructure material is evenly distributed, the Raman spectrum shows the characteristic peaks of tungsten oxide, has high crystallinity, is excited by short-wavelength light, and the emission spectrum shows the characteristic peaks of rare earth ions. Since the crystal structure of tungsten oxide is rich, reversible, and variable, and the energy level splitting is different when the rare earth ions are in different lattice fields, the change of the crystal field can be distinguished according to the characteristics of the emission spectrum, so as to achieve the effect of rare earth ions on the lattice field. It has great potential application value in the field of luminescence, semiconductor field and as a fluorescent probe.

Description

technical field [0001] The invention relates to a preparation method of a rare earth-doped tungsten oxide nanostructure film. Background technique [0002] Rare earth trivalent ions have abundant 4f energy level configurations, and their fluorescence characteristics are greatly affected by the crystal field environment and the symmetry of the lattice. At present, many scholars use semiconductor nanomaterials (ZnO, TiO 2 ) small size effect and lattice sensitization to improve the optical properties of rare earth trivalent ions, which are widely used in bioluminescent probes, optical devices and new luminescent materials. [0003] There have been a large number of literature reports on the synthesis and research of titanium dioxide and zinc oxide doped rare earths in semiconductor compounds, and the crystal structure of tungsten oxide is perovskite-like BCO 3 transition metal oxides are rarely studied. Unlike other semiconductor materials, the crystal structure of tungsten...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/78
Inventor 罗坚义陈锋陈叶青刘焕聪曹智李辰曾庆光
Owner WUYI UNIV
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