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Monolithically integrated external cavity oscillation laser with rapid tunable wavelength

A monolithic integration, laser technology, which is applied to devices controlling laser output parameters, structures of optical resonators, etc., can solve the problems of inability to achieve high-speed wavelength switching, difficult monolithic integration, and narrow tunable laser bandwidth, etc. Integrated, fast frequency switching rates, wide tuning range effects

Active Publication Date: 2015-12-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of this, the present invention aims to solve the problem that traditional tunable lasers have narrow bandwidth and are difficult to monolithically integrate, and the existing monolithic integration schemes and tuning methods cannot achieve high-speed switching of wavelengths. It is proposed to combine microrings and Mach- Zönder interference structure, using electro-optic tuning, coupled into the gain region, provides a monolithic integrated external cavity oscillator laser with fast wavelength tuning

Method used

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  • Monolithically integrated external cavity oscillation laser with rapid tunable wavelength
  • Monolithically integrated external cavity oscillation laser with rapid tunable wavelength
  • Monolithically integrated external cavity oscillation laser with rapid tunable wavelength

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specific Embodiment

[0035] Specific embodiment: monolithic integrated wavelength fast tuned external cavity oscillator laser

[0036] The laser is composed of a gain region and an external cavity oscillation region. The external cavity oscillation region is composed of a silicon nanowire device based on silicon insulator material (SOI). The thickness of the top layer of silicon is 340nm, and the refractive index of the material is 3.4744; The semiconductor optical amplifier chip made of materials is bonded on the SOI chip by thermocompression welding technology, and then coupled with the silicon waveguide through the mode converter and the silicon waveguide; One of the cavity mirrors is used, the reflectivity is greater than 99%.

[0037] as attached Figure 4 And attached Figure 5 They are two example structures of monolithic integrated wavelength fast-tuned external cavity oscillator lasers, which are "round-trip structure" and "circular structure". The following will analyze the lasers of ...

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Abstract

The invention discloses a monolithically integrated external cavity oscillation laser with rapid tunable wavelength. The laser comprises a gain region, a frequency tuning region and a resonant cavity; the gain region is an optical amplifier, and can realize optical coupling with the frequency tuning region in the manner of bonding material, optical grating alignment, spot-size converter or waveguide direct alignment; the frequency tuning region comprises a plurality of micro-rings and a Mach-Zehnder interference structure, rapid switching of the resonant frequency is realized by utilizing the carrier chromatic dispersion or electro-optic effect of a semiconductor material of the Mach-Zehnder interference structure, and stabilization of the resonant frequency is realized by utilizing the thermo-optic effect of the micro-rings; the resonant cavity is formed by one end of the gain region and the frequency tuning region together. Compared with the previous tunable laser, the design scheme is characterized by wide tuning range and short frequency switching time lower than the microsecond level, and is structurally beneficial to integration.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology and planar optical waveguide integration, and relates to a structure of an external cavity oscillation laser with fast adjustable wavelength. Background technique [0002] In recent years, in order to break through the limitation of "electronic bottleneck", photon has been widely regarded as a new information carrier. In the field of long-distance communication, optical communication has achieved great success with the advantages of high bandwidth and low loss; with the development of technology, optical communication will develop towards higher integration density and shorter transmission distance, that is, the scale of optical devices and monolithic integration. Due to the advantages of silicon materials such as large wafer area and CMOS process compatibility, the scheme of using silicon waveguide system to realize integrated optics has attracted more and more attention. At present, a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14H01S5/06
Inventor 叶彤储涛付云飞唐伟杰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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