Preparation method of low-aged-rate 49S quartz crystal resonator

A technology of quartz crystal and aging rate, which is applied in the direction of electrical components, impedance networks, etc., can solve the problems of short service life of products, failure of oscillating circuits, and high defective rate in the market, and achieve improved finish and cleanliness, improved reliability, and improved The effect of product yield and product reliability

Inactive Publication Date: 2015-12-30
珠海东精大电子科技有限公司
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Problems solved by technology

49S quartz crystal resonators are often used on integrated circuit boards. The aging rate of this type of quartz crystal resonators is high. The aging rate means that the frequency and resistance value will change over time. This change exceeds a certain The range will cause the oscillating circ

Method used

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[0019] The technical solution of the present invention will be described in detail below in conjunction with specific embodiments.

[0020] The method for preparing the 49S quartz crystal resonator disclosed in the present invention includes the following steps:

[0021] a. Grind the quartz wafer with a grinding machine;

[0022] b. Put the quartz wafer into the roller beveling machine for beveling. The radius, angular velocity, acceleration of gravity and the quality of the quartz wafer determine the beveling angle. The beveling process can reach the same frequency. Elimination of edge effects, higher frequency adjustability and consistency of resistance, and improved reliability;

[0023] c. Finely grind the chamfered quartz wafer on the grinder to make the surface smoother;

[0024] d. Annealing is carried out in a baking box at a temperature of 180-220℃, and the annealing time is 48-96 hours. The annealing process is used after chamfering to eliminate the stress caused by the machi...

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Abstract

The invention discloses a preparation method of a low-aged-rate 49S quartz crystal resonator which is high in product yield and stability and long in service lifetime. The method comprises the following steps of: a, grinding a quartz wafer; b, carrying out edge chamfering on the quartz wafer; c, carrying out fine grinding on the quartz wafer after the edge chamfering; d, carrying out annealing in a baking box under the temperature of 180-220 DEG C, wherein the annealing time is 48-96 hours; e, calculating a return frequency, obtaining a suitable corrosion frequency according to the return frequency, and carrying out deep corrosion on the quartz wafer by an acidic solution, wherein the corrosion thickness is 0,12 mm; f, under a low vacuum condition, adopting nitrogen ions for carrying out bombardment on the surface of the quartz wafer; g, determining a film layer thickness according to the difference between the corrosion frequency of the quartz wafer and a crystal resonator frequency, then carrying out film plating, and forming a leading-out electrode; and h, mounting the quartz wafer after the film plating to a base, coating conducting resin, and carrying out high temperature solidification.

Description

technical field [0001] The invention relates to a preparation method of a 49S quartz crystal resonator with low aging rate. Background technique [0002] Quartz crystal resonator, also known as quartz crystal, is a resonant element made of the piezoelectric effect of quartz crystal. It is used together with semiconductor devices and resistance-capacitance elements to form a quartz crystal oscillator. 49S quartz crystal resonators are often used on integrated circuit boards. This type of quartz crystal resonators has a high aging rate. The aging rate means that the frequency and resistance value will change over time. This change exceeds a certain range, it will cause the oscillating circuit to not work, and the whole machine will be defective, generally at the level of 5PPM. For the use environment with small tolerances, it cannot match the whole machine well, the market defect rate is relatively high, and the product life is short. There are certain deficiencies. Content...

Claims

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Application Information

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IPC IPC(8): H03H3/02
Inventor 田峰
Owner 珠海东精大电子科技有限公司
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