Check patentability & draft patents in minutes with Patsnap Eureka AI!

Preparation method of electrically erasable programmable read-only memory (EEPROM)

A bit and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as device area failure, and achieve the effects of being beneficial to storage and maintenance, reducing threshold voltage, and improving performance

Active Publication Date: 2016-01-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there may be a risk that if the unused bit structure has problems during the use of EEPROM and presents a high-impedance state, it will cause the entire device area (cell) to fail.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of electrically erasable programmable read-only memory (EEPROM)
  • Preparation method of electrically erasable programmable read-only memory (EEPROM)
  • Preparation method of electrically erasable programmable read-only memory (EEPROM)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The preparation method of the EEPROM of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and still realize the beneficial effects of the present invention . Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0023] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention proposes a preparation method of an electrically erasable programmable read-only memory (EEPROM). According to the preparation method, ion injection is required to be carried out on a normally-open bit structure after a storage bit structure and the normally-open bit structure are formed, ions are injected onto the surface of a substrate below the normally-open bit structure, the threshold voltage can be reduced, the current is increased, data storage and maintain is promoted during the working of the EEPROM, and the performance of a device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing an EEPROM. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (EEPROM, ElectricallyErasableProgrammableRead-OnlyMemory) is a semiconductor storage device that can be electronically rewritten multiple times with a byte (Byte) as the minimum modification unit. Compared with Erasable Programmable Read-Only Memory (EPROM, Erasable Programmable Read-Only Memory), EEPROM does not need to be irradiated with ultraviolet light or removed, and a specific voltage can be used to erase the information on the chip in order to write a new one. data. Due to the excellent performance of EEPROM and the convenience of online operation, it is widely used in BIOS chips and flash memory chips that need to be frequently erased, and gradually replaces some random access memory (RAM, RandomAccessMemory) chips that require power-off retentio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L21/266
CPCH01L21/266H10B99/00H10B69/00
Inventor 高超江红李冰寒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com