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Preparation method for ZnO material with strong red light emission

A technology of red light and raw materials, applied in luminescent materials, chemical instruments and methods, etc., can solve the problems of inability to large-scale promotion and high price of ZnO bulk single crystal, and achieve the effects of low price, simple and safe method and process

Inactive Publication Date: 2016-01-13
CHANGAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Literature (LSVlasenko, GD Watkins, Physical Review B, 71, 125210, 2005) reported that ZnO material with luminescence peak at 700nm was prepared, but this ZnO was prepared through bulk single crystal processing, and because ZnO bulk single crystal was extremely expensive, it was impossible to large-scale promotion

Method used

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  • Preparation method for ZnO material with strong red light emission
  • Preparation method for ZnO material with strong red light emission

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Step 1: Prepare a mixed solution of zinc nitrate, copper nitrate, ammonia and triethanolamine, where the concentration of zinc nitrate is 0.05mol / L, the concentration of copper nitrate is 1mmol / L, the concentration of ammonia is 0.05mol / L, and the concentration of triethanolamine is 0.01mol / L. After the solution is prepared, mix well in the beaker;

[0023] Step 2: Put the glass sheet in an ultrasonic cleaning machine. The treatment solutions are toluene, acetone, carbon tetrachloride, ethanol, and deionized water. Each solution is treated for 5 minutes and dried with high-purity nitrogen after treatment;

[0024] Step 3: Place the processed glass sheet obliquely into the beaker containing the above solution, put the beaker into a microwave oven and heat it with microwaves. The microwave power is 500W and the heating time is 2 hours. After the process is over, a layer of doped glass is grown on the glass sheet. ZnO material of Cu;

[0025] Step 4: Put the ZnO material in a ...

Embodiment 2

[0029] The preparation method and test are the same as in Example 1, but the copper nitrate solution is not added in step 1. Table 1 shows the relative intensity of the red light peak in the PL spectrum prepared in this example after normalization. It can be seen from Table 1 that the ZnO material of this example hardly emits red light.

Embodiment 3

[0031] The preparation method and test are the same as in Example 1, but in step 1, the ammonia solution is not added. Table 1 shows the relative intensity of the red light peak in the PL spectrum prepared in this example after normalization. It can be seen from Table 1 that the red light emission intensity of the ZnO material of this example is worse than that of Example 1.

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Abstract

The invention relates to a preparation method for a ZnO material with strong red light emission. The ZnO material grows on a glass substrate and is doped with copper, wherein a molar ratio of ZnO to Cu is 50: 1. The preparation method for the ZnO material comprises the following steps: preparing a mixed precursor solution, then carrying out microwave synthesis of a ZnO material from the precursor solution, and subjecting the ZnO material to heat treatment so as to obtain the ZnO material with strong red light emission. A normal emission peak of the ZnO material is located in an ultraviolet band near 380 nm or a blue-green light band near 450 to 530 nm, while the ZnO material prepared by using the method provided by the invention has strong light emission characteristic in a red light band of 720 nm, and strong red light emission provides a spectral complementary band for white light modulation.

Description

Technical field [0001] The invention relates to the field of semiconductor materials and their preparation, in particular to a method for preparing a strong red light emitting ZnO material. Background technique [0002] Semiconductor light-emitting materials are the foundation of the semiconductor lighting industry. Conventional semiconductor lighting technology uses semiconductor materials that can emit short-wavelength high-energy photons as chips to excite external phosphors that can emit long-wavelength light to obtain white light. However, this method of obtaining white light will cause a large amount of energy loss due to the Stokes shift, thereby reducing the luminous efficiency of the device and increasing the power loss. Another semiconductor lighting technology that has attracted attention in recent years is to directly perform spectral modulation on semiconductor luminescent materials so that semiconductor material chips can directly emit white light. This method has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/58
Inventor 段理樊继斌于晓晨田野何凤妮程晓姣
Owner CHANGAN UNIV
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