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A kind of preparation method of the zno material of intense red light emission

A technology of red light and raw materials, applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problems of high price of ZnO bulk single crystal and inability to promote it on a large scale, and achieve the effect of low price, simple and safe method process

Inactive Publication Date: 2017-09-01
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Literature (LS Vlasenko, GD Watkins, Physical Review B, 71, 125210, 2005) reported that ZnO materials with a luminescence peak at 700nm were prepared, but this ZnO was prepared by bulk single crystal processing. Due to the price of ZnO bulk single crystal Extremely expensive to scale up

Method used

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  • A kind of preparation method of the zno material of intense red light emission
  • A kind of preparation method of the zno material of intense red light emission

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Step 1: Prepare a mixed solution of zinc nitrate, copper nitrate, ammoniacal liquor and triethanolamine, wherein the zinc nitrate concentration is 0.05mol / L, the copper nitrate concentration is 1mmol / L, the ammoniacal liquor concentration is 0.05mol / L, and the triethanolamine concentration is 0.01mol / L. After the solution is prepared, mix it evenly in the beaker;

[0023] Step 2: Place the glass sheet in an ultrasonic cleaning machine for treatment. The treatment solutions are toluene, acetone, carbon tetrachloride, ethanol and deionized water in sequence. Each solution is treated for 5 minutes. After the treatment is completed, it is dried with high-purity nitrogen;

[0024] Step 3: Place the treated glass piece obliquely in the beaker where the above solution is placed, put the beaker into a microwave oven and heat it with microwaves, the microwave power is 500W, and the heating time is 2 hours. After the process is over, a layer of doped Cu ZnO material;

[0025] ...

Embodiment 2

[0029] The preparation method and test are the same as in Example 1, but no copper nitrate solution is added in step 1. Table 1 shows the normalized relative intensity of the red light peak in the PL spectrum prepared in this example. It can be seen from Table 1 that the ZnO material in this example has almost no red light emission.

Embodiment 3

[0031] The preparation method and test are the same as in Example 1, but no ammonia solution is added in step 1. Table 1 shows the normalized relative intensity of the red light peak in the PL spectrum prepared in this example. It can be seen from Table 1 that the red light emission intensity of the ZnO material in this example is worse than that in Example 1.

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Abstract

The invention relates to a preparation method of a ZnO material emitting strong red light. The ZnO material is grown on a glass substrate and doped with copper, wherein the molar ratio of ZnO and Cu is 50:1. The preparation of the ZnO material The method comprises configuring a mixed precursor solution, synthesizing ZnO material by microwave from the precursor solution, and then heat-treating the ZnO material to obtain a ZnO material emitting strong red light; the normal luminescence peak of the ZnO material is located in the ultraviolet band near 380nm or 450-530nm Nearby blue-green band, and the ZnO material prepared by the present invention has strong luminescence characteristics in the red band of 720nm, and this strong red light emission provides a supplementary band of spectrum for white light modulation.

Description

technical field [0001] The invention relates to the field of semiconductor materials and their preparation, in particular to a preparation method of a ZnO material emitting strong red light. Background technique [0002] Semiconductor luminescent materials are the foundation of the semiconductor lighting industry. Conventional semiconductor lighting technology uses semiconductor materials that can emit short-wavelength high-energy photons as chips to excite external phosphors that can emit long-wavelength light to obtain white light. However, this method of obtaining white light will cause a large amount of energy loss due to the Stokes shift, thereby reducing the luminous efficiency of the device and increasing power loss. Another semiconductor lighting technology that has received attention in recent years is to directly modulate the spectrum of semiconductor light-emitting materials, so that semiconductor material chips can directly emit white light. This method has hig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/58
Inventor 段理樊继斌于晓晨田野何凤妮程晓姣
Owner CHANGAN UNIV
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