Heterojunction high-electronic-mobility spin field effect transistor and fabrication method thereof

Abstract

The invention relates to a heterojunction high-electronic-mobility spin field effect transistor and a fabrication method thereof. The transistor comprises a 6H-SiC drain region, a 6H-SiC source region, a 6H-SiC channel region, a Schottky contact grid electrode, a 4H-SiC substrate, a drain, a source, and SiN isolation layers, wherein the 6H-SiC drain region, the 6H-SiC source region and the 6H-SiC channel are arranged on the 4H-SiC substrate, the source is arranged on the 6H-SiC source region, the Schottky contact grid electrode is arranged on the 6H-SiC channel region, the drain is arranged on the 6H-SiC drain region, and the SiN isolation layers are arranged between the source and the Schottky contact grid and between the Schottky contact grid and the drain. In the heterojunction high-electronic-mobility spin field effect transistor and the fabrication method thereof, disclosed by the invention, the doping concentration and the defect density of a source-drain material can be changed by adjusting ion implantation amount and annealing time, and thus, the spin polarizability of the drain region and the source region at a normal temperature is optimized.

Description

technical field [0001] The invention relates to a heterojunction high electron mobility spin field effect transistor and a manufacturing method thereof, in particular to a heterojunction transistor which utilizes defective 6H-SiC doped with nitrogen atoms to inject source and drain electrodes to receive spin-polarized electrons. Mass junction high electron mobility spin field effect transistor and manufacturing method. Background technique [0002] With the rapid update of modern electronic technology, the development of traditional electronic devices has severely restricted the development of microelectronics science in terms of scale integration and computing speed. The emerging spintronics aims to conveniently regulate the spin of electrons, opening up a new field of information storage and transmission by using spin of electrons, which has caused research in multiple scientific fields such as physics, materials science and electronic information science. common concerns...

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Problems solved by technology

[0004] However, the general spin field effect transistor injects spin electrons into semiconductors by ferromagnetic materials, but the efficiency of spin injection is only a few percent due to the mismatch of energy band structures of ferromagnetic materials such as Fe and semiconductor materials such as Sm.

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