Heterojunction multiplication layer enhanced algan solar-blind avalanche photodiode and preparation method thereof

An avalanche photoelectric, multiplier layer technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problem of slow development of APD, and achieve the effect of reducing collision ionization, high crystal quality, and reducing device noise

Active Publication Date: 2017-03-29
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

AlGaN and GaN have similar material properties. Although the development of GaN APD has made gratifying progress, however, the APD of AlGaN materials has developed slowly. In 2007, Turgut et al. reported again that the Al composition grown on a sapphire substrate is The APD of the AlGaN Schottky structure of 0.4 has a photoelectric multiplication factor of 1560 times [see literature T.Tut, M.Gokkavas, A.Inal, and E.Ozbay, Appl.Phys.Lett., 90, 163506 (2007) .]

Method used

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  • Heterojunction multiplication layer enhanced algan solar-blind avalanche photodiode and preparation method thereof
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  • Heterojunction multiplication layer enhanced algan solar-blind avalanche photodiode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The steps of this embodiment are basically the same as those of Comparative Example 1, the difference being: (6) in n-type Al 0.4 Ga 0.6 A layer of 120nm i-type Al grown on the N separation layer by MOCVD 0.4 Ga 0.6 N multiplication layer; (7) in i-type Al 0.4 Ga 0.6 A layer of 80nm i-type Al grown on the N multiplication layer by MOCVD 0.2 Ga 0.8 N multiplication layer, in i-type Al 0.2 Ga 0.8 Growth of 87nm p-type Al on the N multiplication layer by MOCVD z Ga 1-z In the N layer, the Al composition z=0.2, using magnesocene as the p-type AlGaN dopant, the doping concentration is 2×10 18 cm -3 . image 3 For the AlGaN ultraviolet avalanche photodetector of this embodiment, the incident light wavelength is 275nm, and the incident light power is 0.01mW / cm 2 Under the test conditions of , the photocurrent, dark current and avalanche multiplication factor obtained under different reverse bias voltages, and figure 2 It can be seen from the comparison that the m...

Embodiment 2

[0044] The steps of this embodiment are basically the same as in Example 1, the difference being that the Al x Ga 1-x The thickness of the N buffer layer is 300nm, the n-type Al x Ga 1-x N layer thickness is 300nm, the i-type Al y Ga 1-y The thickness of the N absorbing layer is 150nm, the n-type Al y Ga 1-y The thickness of the N separation layer is 60nm, the i-type Al y Ga 1-y N multiplication layer thickness is 100nm, the i-type Al z Ga 1-z N multiplication layer thickness is 50nm, the p-type Al z Ga 1-z The thickness of the N layer is 120nm, the thickness of the p-type GaN layer is 30nm, and the composition x=0.8, y=0.6, z=0.3.

Embodiment 3

[0046] The steps of this embodiment are basically the same as in Example 1, the difference being that the Al x Ga 1-x N buffer layer thickness is 600nm, the n-type Al x Ga 1-x N layer thickness is 600nm, the i-type Al y Ga 1-y The thickness of the N absorbing layer is 180nm, the n-type Al y Ga 1-y The thickness of the N separation layer is 80nm, the i-type Al y Ga 1-y N multiplication layer thickness is 150nm, the i-type Al z Ga 1-z N multiplication layer thickness is 100nm, the p-type Al z Ga 1-z The thickness of the N layer is 80nm, the thickness of the p-type GaN layer is 50nm, and the composition x=0.9, y=0.8, z=0.5.

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Abstract

The invention discloses a heterojunction multiplication layer reinforced type AlGaN solar-blind avalanche photodiode. The photodiode comprises an AlN template layer, an AlxGa1-xN buffering layer, an n type AlxGa1-xN layer, an i type AlyGa1-yN absorbing layer, an n type AlyGa1-yN separating layer, an i type AlyGa1-yN multiplication layer, an i type AlzGa1-zN multiplication layer, a p type AlzGa1-zN layer and a p type GaN layer bottom up in sequence; an n type ohmic electrode is led out of the n type AlxGa1-xN layer; a p type ohmic electrode is led out of the p type GaN layer; and the x, y and z satisfy the inequation that x is greater than y, y is greater than z, and the z is greater than or equal to 0.2, and y is greater than or equal to z plus 0.2. The invention also discloses a preparation method for the photodiode. The SAM structured heterojunction multiplication layer reinforced type AlGaN solar-blind avalanche photodiode can dramatically improve the electron hole ionization efficiency, reduce the collision and ionization of electrons, reduce the device noises in APD (avalanche photodiode) avalanche breakdown, and can improve the overall performance of the APD devices.

Description

technical field [0001] The patent of the present invention relates to the field of optoelectronic devices, in particular to an AlGaN solar-blind ultraviolet avalanche photodetector and a preparation method thereof. Background technique [0002] Group III nitrides are semiconductor materials with wide bandgap and direct bandgap. They have good thermal conductivity, high electron saturation velocity, and stable physical and chemical properties. They are new semiconductor materials that have been studied at home and abroad in recent years. , high-brightness light-emitting diodes, high-power lasers and high-sensitivity solar-blind or visible light-blind photodetectors have broad application prospects. In the electromagnetic spectrum, radiation with a wavelength in the range of 200nm to 400nm is called ultraviolet radiation. Sunlight is the strongest source of ultraviolet radiation, but due to the absorption and scattering of the ozone layer and other atmospheric gases in the atm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/0304H01L31/18
CPCH01L31/03048H01L31/1075H01L31/1848Y02E10/544
Inventor 陈敦军张荣郑有炓
Owner NANJING UNIV
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