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Composition for etching

A composition and compound technology, applied in the direction of surface etching compositions, semiconductor devices, chemical instruments and methods, etc., can solve problems affecting substrates, etc.

Active Publication Date: 2016-01-27
SOULBRAIN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, silicates and silicic acid produce particles that severely affect the substrate

Method used

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Experimental program
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no. 1 approach A

[0255] [First Embodiment A: Preparation of Etching Composition]

[0256] In the first embodiment A, an etching composition may be produced by mixing at least one silane inorganic acid salt and phosphoric acid in a predetermined weight ratio as shown in Table 1A below. As the first mineral acid, an 85% aqueous solution was used.

[0257] Table 1A

[0258]

[0259] 1)1 st IA: First Inorganic Acid

[0260] 2) 2 nd IA: Second Inorganic Acid

[0261] 3) PA: phosphoric acid

[0262] Figure 5 is an image showing nuclear magnetic resonance (NMR) data of a silane mineral acid salt produced according to the first embodiment A.

[0263] refer to Figure 5 , an image showing at least one silane inorganic acid salt in an etching composition according to at least one embodiment. That is, with R 1 is methyl and R 2 to R 4 The compound represented by the chemical formula A1 which is chlorine reacts with phosphoric acid (for example, the second inorganic acid). Thus, at least ...

experiment Embodiment A1

[0264] [Experimental Example A1: Measurement of Selectivity of Etching Composition]

[0265] Using the etching composition of the present embodiment, the etching of the nitride layer and the oxide layer was performed at a process temperature of 157°C. The etching rate and selectivity of the nitride layer and the oxide layer were measured using an ellipsometer (NANOVIEW, SEMG-1000) of a film thickness measurement system. The measurement results are shown in Table A2 below. The etch rate was determined by etching each layer for about 300 seconds and measuring the difference between the thickness of each layer before etching and the layer thickness of each layer after etching. Therefore, the etching rate is obtained by dividing the thickness difference by the etching time (minutes). Etching selectivity is expressed as the ratio of the etching rate of the nitride layer to the etching rate of the oxide layer.

[0266] Table A2

[0267]

[0268] 1) ThO: thermal oxide layer

...

experiment Embodiment A2

[0276] [Experimental Example A2: Measurement of change with time]

[0277] The etching compositions produced in Examples A1 and A2 were mixed with phosphoric acid. Etching of the nitride layer and the oxide layer was performed using each mixture immediately after mixing (0 hour) and at 8 hours after mixing. The etch rate and selectivity of nitride and oxide layers were measured. In Comparative Example 4 (base PA), the etch speed and selectivity of the nitride layer and the oxide layer were evaluated using phosphoric acid in the same manner as in the above examples.

[0278] The evaluation was performed at a process temperature of 160°C. The etch rate was determined by etching each layer for about 300 seconds and measuring the difference between the thickness of each layer before etching and the layer thickness of each layer after etching. Therefore, the etching rate is obtained by dividing the thickness difference by the etching time (minutes). The etching selectivity is e...

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Abstract

The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Description

technical field [0001] The present invention relates to a composition for etching process, more particularly, to a highly selective etching composition and a method for preparing a semiconductor using the etching composition, the composition can selectively remove a nitride layer while making oxidation The etch rate of the material layer is minimized. Background technique [0002] In the manufacture of semiconductors, oxide layers and nitride layers have been used as insulating layers. The oxide layer can include silicon dioxide (SiO 2 ) layer, the nitride layer may include silicon nitride (SiN 2 )layer. Silicon dioxide and silicon nitride (SiN 2 ) layers are used independently or alternately stacked on top of each other as insulating layers. Additionally, the oxide layer and nitride layer can be used as a hard mask for forming conductive patterns for metal interconnects. [0003] A wet etch process may be performed to remove this nitride layer. Typically, as an etchi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/06C09K13/04H01L21/311
CPCH01L21/31111H01L29/66825C09K13/06H10B41/27H01L21/0214H01L21/02458H01L29/6684
Inventor 朴宰完林廷训李珍旭
Owner SOULBRAIN CO LTD
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