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A kind of preparation method of sintered ITO low-density cylindrical particles

A low-density, cylindrical technology, applied in the field of oxide semiconductor materials, can solve the problems of single molding, low density of pressed green body, high production cost, etc., and achieve the effect of increasing density uniformity, reducing sintering deformation, and improving product performance

Active Publication Date: 2018-03-09
GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing low-density target production methods, most of the sintering temperatures are higher than 1400 degrees, and the sintering furnace requires a vacuum furnace or a pressure furnace, and a single molding is used for molding, and the density of the formed green body is not uniform
The main defect is that the activity of the powder is poor, and the density of the pressed green body is low, resulting in low sintering activity of the green body, so the requirements for sintering equipment and atmosphere are higher, and the production cost is also higher

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The chemical co-precipitation method is used to prepare nano indium tin oxide powder with a composition ratio of 90% indium oxide mass content and 10% tin oxide mass content, and the obtained nano indium tin oxide powder is subjected to fat doping and granulation treatment to obtain indium tin oxide powder Granules are required to be between 2 microns and 60 microns in size, of which the mass of powder particles between 30 microns and 60 microns accounts for more than 65%. Put the indium tin oxide powder into the mould, and press it into a green body with a pressure of 70Mpa in a floating molding manner. The secondary pressing is carried out with a pressure of 20 MPa in a cold isostatic press to obtain a secondary pressed green body. Then put the secondary compacted green body into the normal pressure sintering furnace, feed air, raise the temperature to 300°C at a rate of 0.3°C / min, keep it warm for 4 hours, then raise the temperature to 600°C at 0.4°C / min, and keep it...

Embodiment 2

[0019] The chemical co-precipitation method is used to prepare nano indium tin oxide powder with a composition ratio of 95% indium oxide mass content and 5% tin oxide mass content, and the obtained nano indium tin oxide powder is subjected to fat doping and granulation treatment to obtain indium tin oxide powder grain. Put the indium tin oxide powder into the mould, and press it into a green body with a pressure of 180Mpa in a floating molding manner. Perform secondary pressing with a pressure of 50 MPa in a cold isostatic press to obtain a secondary pressed green body. Then put the secondary compacted green body into the normal pressure sintering furnace, feed air, raise the temperature to 300 degrees at a rate of 0.5 degrees per minute, keep warm for 2 hours, raise the temperature to 600 degrees at 0.3 degrees per minute, and keep it warm for 1 hour Finally, stop the air flow, and heat up to 1000 degrees at a rate of 0.5 degrees per minute. After 1 hour of heat preservation...

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Abstract

The invention relates to a method for preparing sintered ITO low-density cylindrical particles, comprising the following steps: 1. Prepare nano indium tin oxide powder by chemical co-precipitation method, perform fat doping and granulation treatment, and obtain indium tin oxide powder; 2. Put the indium tin oxide powder into the mold and press it into an indium tin oxide green body; 3. Perform secondary pressing on the green body through cold isostatic pressing; 4. Put the secondary pressed green body into an atmospheric pressure sintering furnace According to a certain sintering process, the ITO low-density cylindrical particles are sintered below 1400 degrees. The present invention has the following advantages: 1. The method can use an ordinary atmospheric pressure sintering furnace to prepare indium tin oxide cylindrical particles with a density of 4.1 to 4.5 g / cm3 at a temperature lower than 1400 degrees, greatly reducing production costs. 2. This method is followed by cold isostatic pressing after one-time molding, which increases the density uniformity of the green body, reduces sintering deformation, and makes the density of the final product uniform, improving product performance.

Description

technical field [0001] The invention relates to a method for preparing an evaporation coating material, which belongs to the technical field of oxide semiconductor materials, and in particular to a method for preparing sintered low-density ITO cylindrical particles. Background technique [0002] Indium Tin Oxide (Indium Tin Oxide, referred to as "ITO") target is a raw material for plating ITO transparent conductive film. ITO thin films are widely used in liquid crystal displays, electrostatic shielding, solar cells, touch screens, LEDs, OLEDs, etc. due to their excellent transparent and conductive properties. Evaporation coating is currently one of the main methods for coating ITO thin films. Its principle is to use a heat source to heat a low-density ITO target to evaporate and deposit it on the substrate to be coated. [0003] In the existing low-density target production methods, most of the sintering temperatures are higher than 1400 degrees, and the sintering furnace r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/01C04B35/64
Inventor 陆映东黄誓成武建良农浩黄作
Owner GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD