Method adopting photoetching mask lifting method for achieving optical coating

Abstract

The invention relates to a method adopting photoetching mask lifting method for achieving optical coating. The method aims to realize accurate control over sizes of coating positions of different film system structures. Two light characteristics are realized on one substrate, a cold mirror is realized in a first area, light of 750 nm-800 nm cannot be transmitted in a second area, and reflection resistance of wave bands of 750 nm-800 nm is realized on one side of the coating surface. According to the invention, a corresponding photoetching mask plate is manufactured according to the lattice structure, glue application is realized through a traditional spinning-coating mode, dielectric film coating is realized in an ion-source-assisting E-Beam evaporation mode, metal Cr film coating is realized in a magnetron sputtering coating mode, and finally, photoresist is removed by soaking samples in acetone solutions. On the basis that the photoetching technology is maturely applied to the semiconductor industry, the photoetching mask lifting method is gradually applied to optical coating, and accurate control over the submicron-size structure is achieved through the photoetching mask lifting method.

Description

technical field [0001] The invention discloses an optical coating method, in particular a method for realizing optical coating by using a photolithography mask lifting method. Background technique [0002] In the traditional optical thin film coating process, different thin film materials need to be alternately and evenly plated on a substrate, and the same film structure is used to achieve the required optical characteristics. However, for specific requirements in some special fields, different film structures need to be plated on different positions of the substrate to achieve different optical characteristic effects. With the continuous miniaturization of pattern size, when it reaches sub-micron or even smaller size, the traditional method of jig mask or pasting high temperature glue is not applicable. Due to the precision of machining and the limitation of material deformation and other factors, the traditional fixture mask is difficult to process and realize the comple...

AI Technical Summary

Problems solved by technology

Due to the precision of machining and the limitation of material deformation and other factors, the traditional fixture mask is difficult to process and realize the complex submicron structure on the one hand, and on the other hand, it is difficult to control the edge shadow caused by the coating to within 0.1mm

However, it is more difficult to achieve complex pattern structures by pasting high-temperature tapes. At the same time, the material will outgas during high-temperature baking, which will easily cause white edges at the border.

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