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Crucible for pulling monocrystalline silicon and preparation method therefor

A single-crystal silicon and crucible technology is applied in the field of crucibles for pulling single-crystal silicon and its preparation. long effect

Inactive Publication Date: 2016-02-03
罗万前
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The softening point of the quartz crucible is much lower than the temperature of the silicon melt, so the crucible made of quartz glass for pulling single crystal silicon has large deformation at high temperature and the service life is not long. Now, one crucible only pulls one single crystal
[0006] When the quartz crucible is directly produced by the arc method, 1. The quality of the crucible is not very good; 2. High-quality quartz sand is required; 3. It is difficult to produce when the diameter of the crucible is large

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] specific implementation

[0024] The crucible is composed of a carbon fiber reinforced silicon carbide (C / SiC) crucible blank and various composite layers on the inner surface.

[0025] This preparation method comprises the following steps:

[0026] 1), prepare the crucible blank of C / SiC;

[0027] (1), the present invention adopts molding compound thermocompression forming process (MSC) and in-situ synthesis method to prepare C / SiC crucible blank: 1), chopped carbon fiber+adhesive+carbon powder+silicon powder+(silicon carbide powder)+release agent etc. to form a molding compound. 2) The weighed lumpy molding compound is put into the mold cavity of the hot press. 3) Under the pressure of the press, the lump in the mold cavity Shaped molding compound fills the cavity due to the flow of the molding compound. 4) After hot-pressing and thermosetting demoulding, it becomes a C / SiC crucible green body; 5) After the green body is heat-treated, the resin decomposes and conver...

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Abstract

The invention relates to a crucible for pulling monocrystalline silicon and a preparation method therefor. The crucible consists of a C / SiC crucible blank and various coatings, wherein the C / SiC crucible blank is prepared by manufacturing a green body by methods such as an SMC and then carrying out heat treatment; and the various coatings are prepared by an electric arc method. The crucible prepared by the method is comprehensively better than a quartz crucible prepared by the electric arc method.

Description

technical field [0001] The invention relates to a crucible for pulling single crystal silicon and a preparation method thereof. Background technique [0002] When pulling single crystal silicon, a crucible is used as a container for silicon melt. [0003] In the past, some people have studied the use of silicon carbide as a crucible, but it has not been used so far. [0004] At present, the whole world, without exception, adopts the quartz crucible melted by the electric arc method as the crucible blank of the silicon melt container when drawing single crystal silicon. [0005] The softening point of the quartz crucible is much lower than the temperature of the silicon melt, so the crucible using quartz glass for pulling single crystal silicon has large deformation at high temperature and the service life is not long. Now most of the crucibles only pull one single crystal. [0006] When the quartz crucible is directly produced by the arc method, 1. The quality of the cruci...

Claims

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Application Information

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IPC IPC(8): C30B15/10C04B35/80
Inventor 张洪齐
Owner 罗万前
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