Heterojunction high electron mobility spinning field effect transistor and manufacturing method

Abstract

The invention relates to a heterojunction high electron mobility spinning field effect transistor and a manufacturing method. The transistor comprises a 3C-SiC drain region, a 3C-SiC source region, a 3C-SiC channel region, a Schottky contact gate electrode, an Si substrate, a drain electrode, a source electrode, and an SiN isolation layer. The 3C-SiC drain region, the 3C-SiC source region and the 3C-SiC channel region are located on the Si substrate. The source electrode is located in the 3C-SiC source region, the Schottky contact gate electrode is located in the 3C-SiC channel region, and the drain electrode is located in the 3C-SiC drain region. The SiN isolation layer is located between the source electrode and the Schottky contact gate electrode and between the Schottky contact gate electrode and the drain electrode. The transistor can change the doping density and defect density of source-drain materials through adjusting the dosage and annealing time of ion injection, thereby optimizing the spinning polarizability of the drain region and the source region under room temperature.

Description

technical field [0001] The invention relates to a heterojunction high electron mobility spin field effect transistor and a manufacturing method thereof, in particular to a heterojunction transistor which utilizes defective 3C-SiC doped with nitrogen atoms to inject source and drain electrodes to receive spin-polarized electrons. Mass junction high electron mobility spin field effect transistor and manufacturing method. Background technique [0002] With the rapid update of modern electronic technology, the development of traditional electronic devices has severely restricted the development of microelectronics science in terms of scale integration and computing speed. The emerging spintronics aims to conveniently regulate the spin of electrons, opening up a new field of information storage and transmission by using spin of electrons, which has caused research in multiple scientific fields such as physics, materials science and electronic information science. common concerns...

AI Technical Summary

Problems solved by technology

[0004] However, the general spin field effect transistor injects spin electrons into semiconductors by ferromagnetic materials, but the efficiency of spin injection is only a few percent due to the mismatch of energy band structures of ferromagnetic materials such as Fe and semiconductor materials such as Sm.

Images