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A kind of method for preparing carbon nitride film

A technology of carbon nitride and thin film, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of expensive equipment, high cost, complicated process, etc.

Inactive Publication Date: 2017-12-22
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Scientists have tried a variety of methods to prepare carbon nitride films, such as atomic deposition, plasma-assisted chemical vapor deposition, magnetron sputtering, etc., but the films prepared by these methods are mostly amorphous and require expensive Equipment and complicated process, the cost is also high

Method used

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  • A kind of method for preparing carbon nitride film
  • A kind of method for preparing carbon nitride film
  • A kind of method for preparing carbon nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1, weigh 10.0g urea at room temperature and place it in a quartz crucible, and place it in the middle of the atmosphere furnace; one end of the atmosphere furnace is fed with argon gas with a flow rate of 0.5L / min, and the other end is used as the gas outlet; Along the downwind direction of the airflow, place a magnesium alloy sheet with a size of 2.0cm x 2.0cm and a thickness of 2.0mm flat at a distance of 1.0cm from the side of the quartz crucible containing urea; turn on the power and raise the temperature of the atmosphere furnace to 400°C , keep warm for 2 hours; after the reaction, cool to room temperature, take out the sample; turn off the argon, and clean the furnace.

Embodiment 2

[0031] Embodiment 2, weigh 10.0g urea at room temperature and place it in a quartz crucible, and place it in the middle of the atmosphere furnace; one end of the atmosphere furnace is fed with argon gas with a flow rate of 0.5L / min, and the other end is used as the gas outlet; Along the downwind direction of the airflow, place a magnesium alloy sheet with a size of 2.0cm x 2.0cm and a thickness of 2.0mm flatly at a position 3.0cm away from the quartz crucible filled with urea; turn on the power and raise the temperature of the atmosphere furnace to 450°C , keep warm for 2 hours; after the reaction, cool to room temperature, take out the sample; turn off the argon, and clean the furnace.

Embodiment 3

[0032] Embodiment 3, weigh 10.0g urea at room temperature and place it in a quartz crucible, and place it in the middle of the atmosphere furnace; one end of the atmosphere furnace is fed with argon gas with a flow rate of 0.5L / min, and the other end is used as the gas outlet; Along the downwind direction of the airflow, place a glass sheet with a size of 2.0cm x 2.0cm and a thickness of 2.2mm flat at a distance of 2.0cm from the side of the quartz crucible filled with urea; turn on the power to raise the temperature of the atmosphere furnace to 500°C, Insulate for 2 hours; after the reaction, cool to room temperature, take out the sample; turn off the argon, and clean the furnace.

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Abstract

The invention provides a method for preparing a carbon nitride film, and the fields of film preparation technology and material surface modification technology. The preparation method uses urea as the main raw material, weighs 10.0g of urea at room temperature and places it in a quartz crucible, and places it in the middle of the atmosphere furnace; The other end is used as the gas outlet; along the direction of the air flow, the substrate is flatly placed next to the crucible containing urea; using the temperature gradient in the atmosphere furnace, carbon nitride is deposited on the surface of the substrate through thermal evaporation to form a Uniform transparent film. A uniform and transparent carbon nitride film is formed on the surface of the obtained final product, and the thickness of the formed film can be controlled by controlling the position of the base from the urea and the number of times of repeated coating. It is mainly used to prepare carbon nitride films on substrate materials.

Description

technical field [0001] The invention relates to the fields of film preparation technology and material surface modification technology, in particular to a method for preparing a graphite-like carbon nitride film on the surface of a base material. Background technique [0002] Since the end of the 20th century, someone proposed a metastable phase β-carbon nitride whose hardness may exceed that of diamond. This material has become a research hotspot in the field of materials science. Several other phase states: α phase, cubic phase, quasi-cubic phase and graphite-like phase, they all have hardness comparable to diamond, the principle is that carbon in carbon nitride has sp3 hybrid orbital, and carbon in diamond The hybrid orbitals are the same, and the carbon-nitrogen bond formed in carbon nitride is shorter than that in diamond, and the bond energy is larger, so carbon nitride has higher strength than diamond. In addition to high hardness and high elasticity, carbon nitride ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34C23C16/448
CPCC23C16/347C23C16/4488
Inventor 汪建新闫浩然姜崇喜杨国强陈太军陈迪
Owner SOUTHWEST JIAOTONG UNIV
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