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Absorption layer for broadband spectrum pyroelectric detector and preparation method thereof

A pyroelectric detector and absorption layer technology, which is applied to electric radiation detectors and other directions, can solve the problems of difficulty in using line array and area array detectors, incompatibility with standard semiconductor processes, and weak adhesion of infrared absorption layers. Excellent heat transfer performance, firm adhesion and small specific heat capacity

Active Publication Date: 2016-02-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to propose an absorbing layer for a wide-spectrum pyroelectric detector and its preparation method to solve the problem that the infrared absorbing layer of a pyroelectric detector is not firmly attached or has a narrow absorption band, is incompatible with standard semiconductor processes, and is difficult to be used in line Issues with Column and Area Array Detectors

Method used

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  • Absorption layer for broadband spectrum pyroelectric detector and preparation method thereof
  • Absorption layer for broadband spectrum pyroelectric detector and preparation method thereof

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Embodiment 1

[0025] Based on LiTaO 3 In the unit pyroelectric detector of the material, the absorbing layer for the wide-spectrum pyroelectric detector of the present invention is adopted, and the preparation method of the absorbing layer for the wide-spectrum pyroelectric detector comprises the following steps:

[0026] 1) Polished on both sides, the size is 1.2×1.2mm 2 LiTaO 3 Fabricate the absorbing layer on the wafer, and the two surfaces of the wafer are marked as A-side and B-side respectively. For LiTaO 3 Surface A of the wafer is mechanically thinned and planarized, and polished to a wafer thickness of 10 μm;

[0027] 2) Clean LiTaO 3 The wafer is photolithographically patterned on the A side to form an etching mask;

[0028] 3) In LiTaO 3 The third chromium-nickel alloy layer with a thickness of 7.5nm is deposited on the A side of the wafer by magnetron sputtering process;

[0029] 4) In LiTaO 3 The shape, structure and size of the electrode are etched on the A side of the ...

Embodiment 2

[0038] Based on LiTaO 3 The wide-spectrum pyroelectric detector absorbing layer of the present invention is adopted in the 32 × 1 pyroelectric array detector of the material, and the preparation method of the broad-spectrum pyroelectric detector using the absorbing layer comprises the following steps:

[0039] 1) Polished on both sides, the size is 1.2×1.2mm 2 LiTaO 3 Fabricate the absorbing layer on the wafer, and the two surfaces of the wafer are marked as A-side and B-side respectively. For LiTaO 3 Surface A of the wafer is mechanically thinned and planarized, and polished to a wafer thickness of 10 μm;

[0040] 2) Clean LiTaO 3 The wafer is photolithographically patterned on the A side to form an etching mask;

[0041] 3) In LiTaO 3 The third chromium-nickel alloy layer with a thickness of 8.5nm is deposited on the A side of the wafer by magnetron sputtering process;

[0042] 4) In LiTaO 3 The shape, structure and size of the electrode are etched on the A side of th...

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Abstract

The invention provides an absorption layer for a broadband spectrum pyroelectric detector. The absorption layer comprises a first chrome-nickel alloy layer, a first silicon nitride thin film, a second chrome-nickel alloy layer, a second silicon nitride thin film and a third chrome-nickel alloy layer from the top down in an incidence sequence of the incident radiation. The invention also provides a preparation method of the absorption layer. The method comprises the following steps: preparing the absorption layer on a LiTaO3 wafer, cleaning the LiTaO3 wafer and depositing the third chrome-nickel alloy layer on the A surface of the LiTaO3 wafer; etching the A surface of the LiTaO3 wafer to form a shape structure and size of an electrode, carrying out photoetching patterning on the A surface of the LiTaO3 wafer, and depositing the second silicon nitride thin film on the A surface of the LiTaO3 wafer; depositing the second chrome-nickel alloy layer on the A surface of the LiTaO3 wafer, and carrying out photoetching patterning on the A surface of the LiTaO3 wafer; and 9) depositing the first silicon nitride thin film on the A surface of the LiTaO3 wafer, and depositing the first chrome-nickel alloy layer on the A surface of the LiTaO3 wafer. The absorption layer has the advantages of firm adhesion, good repeatability, wide and flat absorption band, high absorptivity, small specific heat capacity and excellent heat transfer performance and the like.

Description

technical field [0001] The invention relates to an optical film element, in particular to an absorbing layer for a wide-spectrum pyroelectric detector and a preparation method thereof. Background technique [0002] The pyroelectric detector is a detection device for infrared radiation, which is made by utilizing the characteristic that the spontaneous polarization of the pyroelectric body changes with temperature. This device operates at room temperature and has a wide spectral range and high detectivity. Among thermal detectors working at room temperature, its low-frequency characteristics are comparable to those of high-frequency tubes and vacuum thermocouples, while its high-frequency characteristics are superior to any other thermal detectors. Pyroelectric detectors are widely used, mainly including: radiation measurement and calibration, radiation temperature measurement, humidity measurement; infrared spectroscopy measurement. It is widely used in the fields of natio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/12
CPCG01J5/12
Inventor 刘子骥梁志清于贺郑兴
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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