A kind of synthetic preparation method of solar cell diffusion barrier isolation layer

A solar cell and isolation layer technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex process, high cost, cross-doping of phosphorus and boron, etc., to simplify subsequent processes, improve reliability, and reduce cross-doping Diffusion effect

Inactive Publication Date: 2017-09-29
SUZHOU LAISHIDA NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, these technologies all have the problem of phosphorus and boron cross-doping, and require mask protection and subsequent complicated cleaning processes, making the process complicated, expensive, and limited

Method used

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  • A kind of synthetic preparation method of solar cell diffusion barrier isolation layer

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Embodiment 1

[0026] This embodiment discloses a method for synthesizing and preparing a solar cell diffusion barrier isolation layer, the method comprising the following steps:

[0027] (1) Weigh 21.0434g TEOS (0.1mol), 1.44g water (0.08mol), 9.015g isopropanol (0.15mol), 9.2512g PGMEA (0.07mol), mix the above components evenly, and add in the bottom flask.

[0028] (2) Add 2.5252g amberlyst 15 as a solid catalyst to the above reaction mixture, the pH of the above solid catalyst is 2, add a stirring bar to the above single-necked round bottom flask, put it in an oil bath stirrer at 60°C, and react for 5h.

[0029] (3) After the reaction was completed, the reaction mixture was filtered to remove the solid catalyst, and isopropanol, PGMEA, water, etc. were removed by rotary evaporation to obtain the barrier and isolation layer product. The viscosity of the product was tested, and the viscosity was 43.16 cps. The product was collected for use.

Embodiment 2

[0031] A method for synthesizing and preparing a solar cell diffusion barrier barrier layer is disclosed in Example 2. The specific steps of the method are:

[0032] (1) Use a beaker to weigh 1.8g deionized water (0.1mol), 9.015g isopropanol (0.15mol), 4.2087g TEOS (0.02mol), 14.5551g MTEOS (0.08mol) and mix well;

[0033] (2) Weigh 1.0522g amberlyst16 as a solid catalyst (5% equivalent to 0.1mol TEOS), the pH of the solid catalyst is 3, the above solid catalyst is put into a round bottom flask, and then the mixture in (1) is also added Add a stirring bar to the round bottom flask, put the flask into an oil bath stirrer; set the temperature of the oil bath stirrer to 80°C, and react for 4 hours.

[0034] (3) After the above-mentioned reaction is finished, filter out the above-mentioned solid catalyst with a suction filter funnel, and the reaction solution weighs 135.936g.

[0035] (4) Rotate the above reaction solution at a temperature of 60° C. for 1 hour to remove isopropan...

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Abstract

The invention relates to a synthesis and preparation method for a solar cell diffusion barrier isolation layer. The method includes the steps of: adding tetracarbalkoxy orthosilicate and / or alkoxy silane, water and an organic solvent to a round-bottom flask, and mixing uniformly; adding a solid catalyst to a mixed reactant, the amount of the solid catalyst accounting for 1 to 20% of the mixed reactant, and stirring uniformly; heating the mixed reactant to 30 to 150 DEG C, and reacting for 2 to 20 hours; after a reaction is finished, filtering and removing the solid catalyst, then performing rotary evaporation to remove the organic solvent, thereby obtaining a barrier isolation layer product; and preparing the barrier isolation layer product into a film coating solution, and then coating the film coating solution to a dopant film surface. The synthesis and preparation method provided by the invention simplifies process steps, solves the problem of crossed doping of a film coating type boron phosphor dopant in a conventional diffusion technology, does not need mask protection and a subsequent complicated removing process, reduces cost, and improves reliability of a solar cell.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, in particular to a diffusion barrier isolation layer of a solar cell, in particular to a synthesis and preparation method of a diffusion barrier isolation layer of a solar cell. Background technique [0002] Vapor phase doping is a method of doping semiconductor materials. The electrical properties of semiconductors are very sensitive to impurities. Therefore, it is very important to control the doping concentration in doping technology. The dopant to be doped in gas phase epitaxy is usually in the form of a compound according to a certain A certain amount is added to the gaseous reaction mixture, so that the epitaxial film obtains suitable electrical properties. Vapor-phase doping is a conventional technology in the production of traditional solar cells. However, with the growing photovoltaic and semiconductor industries, and the rapid development of solar cell technology, the traditional ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/0216H01L31/02167H01L31/02168H01L31/18Y02E10/50Y02P70/50
Inventor 周励贵徐国辉袁秀娟
Owner SUZHOU LAISHIDA NEW MATERIAL TECH
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