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Gallium nitride sensor, preparation method and multi-sensor system

A sensor, gallium nitride technology, applied in the field of sensors, can solve the problems of limited working principle of silicon-based sensors, silicon-based devices can not meet the requirements, and the sensitivity is not enough, so as to improve the detection effect, reduce the detection difficulty, and overcome the low sensitivity. Effect

Active Publication Date: 2016-03-23
LEISHI BEIJING PHOTOELECTRIC ENG TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are three main shortcomings: first, the sensitivity is not high enough. In the application fields that require high sensitivity, such as environmental detection, medical applications, etc., silicon-based devices cannot meet the requirements; second, silicon-based devices are difficult to operate under harsh environmental conditions. work, such as high temperature, high humidity, high pressure, etc.; the third is that silicon-based sensors are limited by their working principles and are large in size. For portable or even wearable applications, they often cannot meet the requirements
[0006] In the prior art, there are defects such as low sensitivity, small detection range and poor portability

Method used

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Embodiment Construction

[0032] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0033] According to an embodiment of the present invention, a gallium nitride sensor is provided, such as figure 1 A schematic diagram of the cross-sectional structure of an embodiment of the GaN sensor of the present invention is shown. The sensor includes at least:

[0034] A heterogeneous semiconductor substrate, and a transistor with a group III nitride (eg, g...

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Abstract

The invention discloses a gallium nitride sensor, a preparation method and a multi-sensor system. The sensor comprises a heterostructure semiconductor substrate and a transistor which is located on the heterostructure semiconductor substrate, based on III-group nitrides and of an HEMT structure. Metal of the source electrode and metal of the drain electrode are both arranged on the portion, on the top layer of the transistor, of the semiconductor. A functionalized membrane obtained through functionalized processing is arranged on the surface of the grid electrode, and an induction area is formed in the exposed grid electrode area between the source electrode and the drain electrode. By detecting the current changes of the induction area, the concentration of to-be-detected substances making contact with the induction area is detected. By means of the scheme, the defects that in the prior art, sensitivity is low, the detection range is small and portability is poor can be overcome, and the advantages of being high in sensitivity, large in detection range and good in portability are achieved.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a gallium nitride (GaN) sensor, a preparation method and a multi-sensor system. Background technique [0002] In the atmosphere and gas supply system, the chemical composition detection of pollutants and biological water liquid components is extremely important for environmental protection and medical care. For example, in the hazardous gas transportation system, rapid detection of gas leakage plays a key role in the protection of workers' lives, health and safety, as well as the prevention and control of environmental pollution. [0003] In addition, through chemical sensing, it is also possible to detect the presence of heavy metals, organic pollutants, inorganic pollutants, industrial pollutants, and other relevant liquid characteristics (such as pH, salinity, turbidity, and smell, etc.). In addition, through the detection of body fluids (blood, saliva) and gases (breathing)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
CPCG01N27/414B81B2201/0214
Inventor 法比奥·圣阿加塔艾莉娜·耶尔沃利诺罗伯特·索科洛夫斯基董明智张国旗王小葵
Owner LEISHI BEIJING PHOTOELECTRIC ENG TECH CO LTD
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