Gallium nitride sensor, preparation method and multi-sensor system
A sensor, gallium nitride technology, applied in the field of sensors, can solve the problems of limited working principle of silicon-based sensors, silicon-based devices can not meet the requirements, and the sensitivity is not enough, so as to improve the detection effect, reduce the detection difficulty, and overcome the low sensitivity. Effect
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[0032] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0033] According to an embodiment of the present invention, a gallium nitride sensor is provided, such as figure 1 A schematic diagram of the cross-sectional structure of an embodiment of the GaN sensor of the present invention is shown. The sensor includes at least:
[0034] A heterogeneous semiconductor substrate, and a transistor with a group III nitride (eg, g...
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