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A method for the controllable preparation of single crystal tin nanowires/microwires from the surface of tin aluminum alloy

A technology of aluminum alloy surface and nanowires, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complicated process and residual impurities, and achieve simple process, easy operation and strong controllability Effect

Inactive Publication Date: 2018-08-14
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for the controllable preparation of single-crystal tin nanowires / microwires from the surface of tin-aluminum alloys, which solves the problems of complex processes and residual impurities in existing chemical technology methods

Method used

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  • A method for the controllable preparation of single crystal tin nanowires/microwires from the surface of tin aluminum alloy
  • A method for the controllable preparation of single crystal tin nanowires/microwires from the surface of tin aluminum alloy
  • A method for the controllable preparation of single crystal tin nanowires/microwires from the surface of tin aluminum alloy

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Experimental program
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Embodiment 1

[0037] (1) The Sn80Al alloy is smelted in the air, and then rapidly cooled by water cooling, the alloy structure is relatively fine;

[0038] (2) cutting the smelted Sn80Al alloy into a sample with a thickness of 1.5 mm by wire cutting, and then grinding, polishing and cleaning to obtain a smooth and clean surface;

[0039] (3) Insulate the obtained sample in a drying oven at 60°C for 24 hours, and a large number of single crystal tin micron wires can be obtained on the surface of the sample, such as figure 1 As shown, the growth density is 40 roots / mm 2 . figure 2 It is one of the micron wires with a diameter of about 1 μm.

Embodiment 2

[0041] (1) The Sn50Al alloy is smelted in the air, and then cooled rapidly, the alloy structure is relatively coarse;

[0042](2) cutting the smelted Sn50Al alloy into a sample with a thickness of 1 mm by wire cutting, and then grinding, polishing and cleaning to obtain a smooth and clean surface;

[0043] (3) Heat the obtained sample in a drying oven at 60°C for 72 hours, and a large number of single crystal tin micron wires grow on the surface and sides of the sample, with a growth density of 40 wires / mm 2. . Among them, the micron wires grown on the side are as image 3 As shown, its diameter is 2-5 μm.

Embodiment 3

[0045] (1) Smelting Sn80Al alloy in the air, and then rapidly cooling by water cooling;

[0046] (2) cutting the smelted Sn80Al alloy into a sample with a thickness of 2 mm by wire cutting, and then grinding, polishing and cleaning to obtain a smooth and clean surface;

[0047] (3) Insulate the obtained sample in a drying oven at 150°C for 6 hours, and a large number of single crystal tin micron wires can be obtained on the surface of the sample, such as Figure 4 As shown, the resulting microwire length is greater than 1 mm. Figure 5 It is a tin micro-wire on the surface of the sample and its transmission electron microscope electron diffraction spectrum, indicating that the micro-wire is a single crystal.

[0048] The above results show that the present invention avoids the complex preparation process in the traditional chemical method, and can realize the controllable preparation of single crystal tin nanowires / microwires, which provides convenience for the preparation of...

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Abstract

The invention discloses a method for controllably preparing single crystal tin nanowires / micron wires from the surface of tin-aluminum alloy, belonging to the field of preparation of metal nanometerials. According to the method, the diameter and length size controllable preparation of the single crystal tin nanowires / micron wires can be realized; the tin-aluminum alloy is taken as a raw material and is subjected to smelting, high-temperature storage and the like so as to prepare the single crystal tin nanowires / micron wires with controllable diameters and lengths; by adjusting the microcosmic structural size of the alloy, the preparation of the tin nanowires / micron wires with different diameters can be realized, and the diameter range is 10nm-20mu m; by adjusting the high-temperature storage conditions, the preparation of the tin nanowires / micron wires with different lengths can be realized, and the length range is 100nm-2mm; conventional chemical methods for preparing the nanowires are broken through, complex technical processes including the preparation, dissolving and the like of templates are omitted, the preparation process is simple, and a novel method is provided for the controllable preparation of the single crystal tin nanowires / micron wires.

Description

technical field [0001] The invention relates to the technical field of preparation of metal nanomaterials, in particular to a method for controllable preparation of single crystal tin nanowires / microwires from the surface of tin-aluminum alloys, which can realize the controllable preparation of the length and diameter of tin nanowires / microwires. Background technique [0002] Nanowires are one-dimensional nanomaterials. Due to their unique physical properties (electricity, magnetism, optics and mechanics), they have potential applications in the fields of microelectronics and optoelectronic devices, sensors, solar cells, etc. It has aroused great attention of researchers. Metal tin nanowires have a wide range of applications in chemical sensors, lithium-ion batteries, light-emitting diodes and other fields. In particular, the electron transport properties of the single crystal tin nanowires are more excellent, its performance can be greatly improved, and it can exhibit supe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B1/02C30B29/02
CPCC30B1/02C30B29/02
Inventor 李财富刘志权
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI